Paper Sharing
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【Domestic Papers】High-Voltage Ga₂O₃ Vertical Schottky Barrier Diode With Suspended Field Plate Assisted Shallow Mesa Termination
[ 2025-06-27 ] -
【Domestic Papers】Enhanced linear dynamic range and response speed in interdigital-electrode solar-blind photodetector by contact engineering
[ 2025-06-27 ] -
【Device Papers】Reproducibility of 10 kV-class NiO/Ga₂O₃ heterojunction rectifiers
[ 2025-06-27 ] -
【Device Papers】High Thermal Conductive Ga₂O₃ MOSFET with Diamond Substrate and its Simulation Analysis
[ 2025-06-27 ] -
【Device Papers】Annealing-free Ohmic contact of β-Ga₂O₃ via nitrogen plasma treatment
[ 2025-06-27 ] -
【Domestic Papers】1.4-kV Irradiation-Hardened β-Ga₂O₃ Heterojunction Barrier Schottky Diode Under 10⁷ ions/cm² Fluence and 82.1 MeV⋅cm²/mg LET Environments
[ 2025-06-26 ] -
【Domestic Papers】Low Leakage Current β-Ga₂O₃ Self-Aligned Trench Junction Barrier Schottky Diodes
[ 2025-06-26 ] -
【Domestic Papers】3.9 kV Vertical β-Ga₂O₃ Hetero-Junction Diode With High-Temperature Operational Capability
[ 2025-06-26 ] -
【Others Papers】Evaluation of Sn-doped β-Ga₂O₃ persistent photoconductivity with sub-band gap excitation energy
[ 2025-06-26 ] -
【Others Papers】New insight into the phase stability and comprehensive properties of Ga₂O₃ oxides for third generation semiconductor applications
[ 2025-06-26 ]
