Paper Sharing
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【Domestic Papers】Single-event burnout in β-Ga₂O₃ Schottky barrier diode induced by heavy ion irradiation
[ 2025-10-10 ] -
【Member Papers】Integration of β-Ga₂O₃ Schottky Barrier Diodes on thermoelectric modules for heat recovery and active cooling
[ 2025-10-10 ] -
【Member Papers】Multi-fin normally-off β-Ga₂O₃ vertical transistor with a breakdown voltage exceeding 10 kV
[ 2025-10-09 ] -
【Member Papers】Anisotropic Ga₂O₃ Nanograting with Photonic and Band Engineering Enables High-Sensitivity Solar-Blind Photodetectors
[ 2025-10-09 ] -
【Member Papers】High open-circuit voltage nuclear batteries enabled by integrated stacked p-diamond/n-Ga₂O₃ heterojunction
[ 2025-09-29 ] -
【Member Papers】Artificial Interfacial Quasi-Electric Field: A Pathway to Promote Ga₂O₃ Photodetectors
[ 2025-09-29 ] -
【Device Papers】Regulating oxygen vacancies to achieve stable non-volatile switching characteristics and neuromorphic computing in a-Ga₂O₃ based memristors
[ 2025-09-29 ] -
【Device Papers】Lattice parameters and elastic properties for strain analysis in κ-(InₓGa₁₋ₓ)₂O₃/κ-Ga₂O₃/Al₂O₃ heterostructures from density functional theory, x-ray diffraction, and scanning precession nanobeam electron diffraction
[ 2025-09-29 ] -
【Device Papers】Achieving Face-Selective Ohmic Contact to β-Ga₂O₃ via Anisotropic Trench Structure
[ 2025-09-29 ] -
【Member Papers】Structural and optical properties of high crystalline quality orthorhombic к-Ga₂O₃ heteroepitaxial films grown by HVPE
[ 2025-09-28 ]
