【Epitaxy Papers】Modeling and growth analysis of heteroepitaxial α-Ga₂O₃ films by mist chemical vapor deposition

      Researchers from the Shandong University have published a dissertation titled "Modeling and growth analysis of heteroepitaxial α-Ga₂O₃ films by mist chemical vapor deposition" in Materials Science in Semiconductor Processing.

Abstract

      α-Ga₂O₃ films hold great potential for power electronic devices. However, achieving rapid, uniform, and high-quality heteroepitaxial growth of α-Ga₂O₃ via mist chemical vapor deposition (mist-CVD) remains challenging, primarily due to the insufficient understanding of the complex transport and reaction processes within the reactor. Herein, this study establishes, for the first time, a fully coupled finite element model that integrates chemical reaction kinetics with droplet dynamics to simulate the growth of α-Ga₂O₃ in a vertical hot-wall mist-CVD reactor. The model analyzes the influence of substrate height(H), growth temperature(T), and inlet flow velocity(v) on the growth environment. Through this model, a methodology for determining the growth window based on substrate temperature and reactant consumption on the substrate was established. The optimal process window (H = 25 cm, T = 520 °C, v = 0.1 m/s) was identified. Furthermore, the model reveals that the origin of the non-uniform film profile (thicker center and thinner edges) lies in the Leidenfrost motion of droplet and local temperature gradients. This work not only provides direct guidance for the process optimization of α-Ga₂O₃ but also establishes a modeling framework and analytical approach applied to other complex CVD systems.

DOI：

https://doi.org/10.1016/j.mssp.2026.110733