Paper Sharing
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【Device Papers】A self-powered UV photodetector based on a β-Ga₂O₃/p-GaN p-n heterojunction fabricated via magnetron sputtering
[ 2024-12-24 ] -
【Device Papers】Device structural engineering and modelling of emerging III-nitride/β-Ga₂O₃ nano-HEMT for high-power and THz electronics
[ 2024-12-24 ] -
【Device Papers】Giant Colloidal Quantum Dot/α-Ga₂O₃ Heterojunction for High Performance UV–Vis–IR Broadband Photodetector
[ 2024-12-24 ] -
【Domestic Papers】Researchers Led by Academician Deren Yang from the Zhejiang University——Growth and Properties of 2-Inch Fe-Doped (010) β-Ga₂O₃ Single Crystal Substrates
[ 2024-12-23 ] -
【Member Papers】 Shenzhen Pinghu Laboratory —— Rhodium-Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra-Wide Bandgap Semiconductors
[ 2024-12-23 ] -
【International Papers】Luminescence properties of dislocations in α-Ga₂O₃
[ 2024-12-23 ] -
【Epitaxy Papers】Challenges and solutions in Mist-CVD of Ga₂O₃ heteroepitaxial films
[ 2024-12-23 ] -
【Epitaxy Papers】Germanium surface segregation in highly doped Ge:β-Ga₂O₃ grown by molecular beam epitaxy observed by synchrotron radiation hard x-ray photoelectron spectroscopy
[ 2024-12-23 ] -
【Epitaxy Papers】Impact of an annealing atmosphere on band-alignment of a plasma-enhanced atomic layer deposition-grown Ga₂O₃/SiC heterojunction
[ 2024-12-23 ] -
【Device Papers】Gallium vacancy displacement damage induced by 1 MeV neutron irradiation in β-Ga₂O₃ solar-blind photodetector
[ 2024-12-23 ]
