【Device Papers】NiO/Ga₂O₃ heterojunction for transparent and flexible solar-blind UV photodetector application

      Researchers from the Shanghai University have published a dissertation titled "NiO/Ga₂O₃ heterojunction for transparent and flexible solar-blind UV photodetector application" in Physica B: Condensed Matter.

Abstract

      Amorphous Ga₂O₃ (a-Ga₂O₃) films offer the advantages of room-temperature fabrication and compatibility with various substrates without the need for lattice matching, making them highly suitable for energy-efficient in the field of flexible solar-blind ultraviolet (UV) photodetectors. In this study, radio-frequency (RF) magnetron sputtering method was used to fabricate a transparent NiO/a-Ga₂O₃ heterojunction solar-blind UV photodetector on a flexible polyethylene terephthalate (PET) substrate at room temperature. The device exhibits excellent self-powered characteristics (1.25 mA/W responsivity at 0 V bias) and demonstrates an enhanced responsivity of 422.56 mA/W under -5 V bias when exposed to 254 nm UV light. These findings expand the potential applications of high-performance, all-oxide, transparent and flexible solar-blind UV photodetectors.

DOI：

https://doi.org/10.1016/j.physb.2025.417366