Paper Sharing
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【International Papers】Gallium Oxide Memristors: A Review of Resistive Switching Devices and Emerging Applications
[ 2025-09-23 ] -
【Member Papers】Electronic properties of defects on the (100) casting β-Ga₂O₃: Phenomena and mechanisms
[ 2025-09-22 ] -
【International Papers】Deep level defects in MOCVD-grown β-(AlₓGa₁₋ₓ)₂O₃
[ 2025-09-22 ] -
【Epitaxy Papers】P-type Ca-doped two-dimensional Ga₂O₃ with strain-modulated high hole mobility and anisotropy
[ 2025-09-22 ] -
【Epitaxy Papers】Post-rapid Thermal Annealing Time-Dependent Engineering of Gallium Oxide/Gallium Nitride Heterostructures for Enhanced Optoelectronic Performance
[ 2025-09-22 ] -
【Epitaxy Papers】Ultrawide bandgap semiconductors for photonic applications: recent advances in epitaxial Ga₂O₃, hBN, and ScAlN
[ 2025-09-22 ] -
【Member Papers】Long Hao’s Group at Xiamen University Achieves a Series of Advances in Ga₂O₃ Interface Control, Characterization, and Optoelectronic Devices Research
[ 2025-09-19 ] -
【Domestic Papers】Low Von β -Ga₂O₃ Schottky Diodes With Synergistic Suppression of Bulk and Perimeter Leakage
[ 2025-09-19 ] -
【International Papers】Chemical reaction mechanism between trimethylgallium and oxygen for β-gallium oxide growth: Thermodynamic and experimental studies
[ 2025-09-19 ] -
【Device Papers】Self-Powered UVC and X-Ray Photodetection in Single Sn-Doped β-Ga₂O₃ Microwire Schottky Diodes
[ 2025-09-19 ]
