Paper Sharing
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【Domestic Papers】 South China Normal University——Gate-tunable positive and negative photoresponses based on a mixed-dimensional Ga₂O₃/WSe₂ junction field-effect transistor for logic operation
[ 2025-02-13 ] -
【International Papers】Electrothermal enhancement of β-(AlₓGa₁₋ₓ)₂O₃/Ga₂O₃ heterostructure field-effect transistors via back-end-of-line sputter-deposited AlN layer
[ 2025-02-13 ] -
【International Papers】Radiation resilience of β-Ga₂O₃ Schottky barrier diodes under high dose gamma radiation
[ 2025-02-13 ] -
【International Papers】Thermal stability and annealing of intrinsic point defects in beta-Ga₂O₃
[ 2025-02-13 ] -
【Device Papers】1D Core@Dual-Shell Radial Heterojunction for Unipolar Barrier Solar-Blind Avalanche Photodetector
[ 2025-02-13 ] -
【Device Papers】Effect of p-NiOx junction termination extension on interface states in NiOx/β-Ga₂O₃ heterojunction diodes
[ 2025-02-13 ] -
【Device Papers】Revealing the photo-sensing capabilities of a super-flexible, paper-based wearable a-Ga₂O₃ self-driven ultra-high-performance solar-blind photodetector
[ 2025-02-13 ] -
【Member Papers】GAREN SEMI's Breakthrough in Gallium Oxide Single Crystal Growth were Published in the Crystal Growth&Design
[ 2025-02-11 ] -
【International Papers】Editor's Picks丨In situ etching of β-Ga₂O₃ using tert-butyl chloride in an MOCVD system
[ 2025-02-11 ] -
【Domestic Papers】University of Chinese Academy of Sciences Explore——High Temperature Image Pre-Processing Based on ε-Ga₂O₃ Photo-Synapses
[ 2025-02-11 ]
