Paper Sharing
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【Epitaxy Papers】Gallium flux induced etching of β-Ga₂O₃ in an LPCVD system
[ 2025-08-28 ] -
【Epitaxy Papers】Achieving Nanocrystalline Si-Doped Ga₂O₃ Thin Films using Low-Temperature Si Induced Recrystallization Effect for Solar Blind Ultraviolet Detection Applications
[ 2025-08-28 ] -
【Epitaxy Papers】Temperature-dependent vapor-phase nucleation and surface migration in CVD-grown β-Ga₂O₃ epilayers on 4H-SiC substrate
[ 2025-08-28 ] -
【Member Papers】Enhanced performance of solar-blind UV photodetectors based on β-Ga₂O₃/SiO₂/Si nBn heterojunction with varied thicknesses of SiO₂ blocking layer
[ 2025-08-27 ] -
【International Papers】p-Type β-Ga₂O₃ Homoepitaxial Films with Superior Electrical Transport Properties
[ 2025-08-27 ] -
【Domestic Papers】Multispectral In-Sensor computing for lmage Recognition Based on the Opposite Photogating Photosynapse
[ 2025-08-27 ] -
【Device Papers】Noise suppression and enhanced energy resolution in NiO/β-Ga₂O₃ radiation detectors
[ 2025-08-27 ] -
【Device Papers】From Materials to Device Engineering: Unravelling the Path to High Performance β-Ga₂O₃ based p-n Heterostructure Photodetectors
[ 2025-08-27 ] -
【Device Papers】Self-powered ultraviolet photodetectors based on sub-100-nm nonstoichiometric β-Ga₂O₃−δ thin films: role of oxygen vacancies in carrier transport
[ 2025-08-27 ] -
【Device Papers】Enhancement of IGZO TFT Performance via Metal-Induced Crystallization: A Pathway to High-Performance Next-Generation Displays
[ 2025-08-27 ]
