Member News
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【Member News】Breakthrough 9,000 V! Fujia Gallium Epitaxy Enables Record Ga₂O₃ MOSFET Breakdown, Ushering Power Devices into the “10 kV Era”
[ 2026-04-01 ] -
【Member News】Breakthrough of 9,000 V! Jiufengshan Laboratory Sets New Breakdown Voltage Record for Ga₂O₃ MOSFETs
[ 2026-03-31 ] -
【Member News】Shandong Liguang Microelectronics: A Successful Conclusion to SEMICON CHINA 2026!
[ 2026-03-31 ] -
【Member News】Raphael Optech Shines at the 2026 Munich Shanghai Photonics Expo
[ 2026-03-31 ] -
【Member News】Exhibitor Spotlight at the 2026 Semiconductor New Materials Development (Deyang) Conference | Wonder-sino Group
[ 2026-03-30 ] -
【Member News】Fujia Gallium Showcases Its Products at SEMICON CHINA 2026
[ 2026-03-30 ] -
【Member News】World’s First 12-inch Ga₂O₃ Single Crystal Achieved, Advancing 4th-Generation Semiconductors
[ 2026-03-27 ] -
【Member News】GAREN SEMI Showcases World’s First 8-inch Gallium Oxide Homoepitaxial Wafer at SEMICON CHINA 2026
[ 2026-03-26 ] -
【Member News】Authoritative Validation！GAREN SEMI' s 8-lnchHomoepitaxial Gallium Oxide Wafers Deliver Outstanding Performance with Globally Leading Key Metrics
[ 2026-03-24 ] -
【Member News】Fujia Gallium Participates in the Second Fourth-Generation Semiconductor Technology Symposium; Second Gallium Oxide Technology & Industry Symposium Scheduled in Fuyang, Hangzhou
[ 2026-03-23 ]
