Paper Sharing
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【Domestic Papers】Source-Field-Plated β-(AlₓGa₁₋ₓ)₂O₃ MOSFET with Breakdown Voltage Over 7kV
[ 2025-07-28 ] -
【International Papers】Structural and electrical properties of (100) β-(ScₓGa₁₋ₓ)₂O₃/Ga₂O₃ heterojunctions
[ 2025-07-28 ] -
【Others Papers】Insights into the greatly boosted red photoluminescence emission in Ga₂O₃:Eu³⁺/Ti⁴⁺ composite ultrawide bandgap semiconductors
[ 2025-07-28 ] -
【Others Papers】First-principles investigation of Zn-doped β-Ga₂O₃: Electronic, optoelectronic, and thermodynamic properties
[ 2025-07-28 ] -
【Others Papers】Structural, elastic, luminescence, electrical and first principles analysis of green synthesized β-Ga₂O₃ nanoparticles
[ 2025-07-28 ] -
【Member Papers】Temperature dependence of barrier height in Ni/β-Ga₂O₃ Schottky barrier diode precisely determined by the analysis based on thermionic emission-diffusion model
[ 2025-07-25 ] -
【Domestic Papers】Modulation of defect structures for MOCVD-grown ε-Ga₂O₃ thin films by using sapphire substrates with large off-axis angles
[ 2025-07-25 ] -
【International Papers】Achieving 0.05 Ω-mm contact resistance in non-alloyed Ti/Au ohmics to β-Ga₂O₃ by removing surface carbon
[ 2025-07-25 ] -
【Device Papers】Dry Etching of Cr₂MnO₄ Thin Films for Forming p-n Junctions with β-Ga₂O₃
[ 2025-07-25 ] -
【Device Papers】Performance enhancement of asymmetric gate graded-AlGaN/GaN HEMT on β-Ga₂O₃ substrate for RF applications
[ 2025-07-25 ]
