Paper Sharing
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【Domestic Papers】 Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences --- Self-supported β-Ga₂O₃ nanowires and for stretchable solar-blind UV photodetectors
[ 2025-06-05 ] -
【Others Papers】Structural and Electronic Properties of Corundum and Monoclinic (Al₁₋ₓInₓ)₂O₃ Alloys by First-Principles
[ 2025-06-05 ] -
【Others Papers】Solution-processed gallium oxide semiconductor nanomaterials via surface chemical activity of liquid metals
[ 2025-06-05 ] -
【Others Papers】Enhancing vertical piezoelectricity in Al-doped β-Ga₂O₃ bilayer: a first-principles study
[ 2025-06-05 ] -
【Member Papers】Xidian University---Breakdown voltage over 10 kV β-Ga₂O₃ heterojunction FETs with RESURF structure
[ 2025-06-03 ] -
【Epitaxy Papers】Pressure-driven growth mechanisms and uniformity analysis of β-Ga₂O₃/4H-SiC heteroepitaxy
[ 2025-06-03 ] -
【Epitaxy Papers】Effect of nitrogen annealing treatment on the crystal structure and band alignment of atomic layer deposition deposited β−Ga₂O₃
[ 2025-06-03 ] -
【Epitaxy Papers】Effects of Post-Annealing Temperature on the Properties of β-Ga₂O₃ Thin Films Prepared by Spray Pyrolysis
[ 2025-06-03 ] -
【Domestic Papers】Sun Yat-Sen University --- Growth of Ga₂O₃ thin films on Si(111) substrates by metal-organic chemical vapor deposition
[ 2025-05-30 ] -
【Member Papers】Xidian University---Preliminary development and high-voltage lifetime testing of vertical photoconductive semiconductor switches based on Fe-doped β-Ga₂O₃
[ 2025-05-30 ]
