Paper Sharing
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【International Papers】In situ patterned damage-free etching of three-dimensional structures in β-Ga₂O₃ using triethylgallium
[ 2025-09-08 ] -
【Device Papers】Near-Rectangle Electric Field for a Novel β-Ga₂O₃ Nanomembrane MISFET with Double Linearly-Doped Drift Layer: Analytical Model and Simulation
[ 2025-09-08 ] -
【Device Papers】Carbon-Nanotube/β-Ga₂O₃ Heterojunction PIN Diodes
[ 2025-09-08 ] -
【Device Papers】Investigation of Maximum Gain Amplifier using a Split Stacked Recessed Gate design on β-Ga₂O₃ MOSFET for S - band Applications
[ 2025-09-08 ] -
【Device Papers】High Voltage Design Strategies for Gallium Oxide Power Devices
[ 2025-09-08 ] -
【Member Papers】Ultra-wide Bandgap β-Ga₂O₃ Devices：A Review of High-efficiency Innovations in Aerospace Power Electronics and Challenges in Extreme Environments
[ 2025-09-05 ] -
【International Papers】Electron beam irradiation-induced transport and recombination in p-type gallium oxide grown on (001) β-Ga₂O₃ substrate
[ 2025-09-05 ] -
【Others Papers】Structural, anisotropic elasticity, and thermal properties of Ga₂O₃ polymorphs: A first-principles study
[ 2025-09-05 ] -
【Others Papers】Weak Selective Growth of Ga₂O₃ Nanowires in Hydrothermal Synthesis
[ 2025-09-05 ] -
【Others Papers】Influence of intrinsic defects on the structural, electronic and optical properties of 2D-β-Ga₂O₃ with Varying surfaces
[ 2025-09-05 ]
