Paper Sharing
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【International Papers】A resilient type-III broken gap Ga₂O₃/SiC van der Waals heterogeneous bilayer with band-to-band tunneling effect and tunable electronic property
[ 2024-08-09 ] -
【International Papers】β-Ga₂O₃ Schottky Barrier Diodes with Near-Zero Turn-on Voltage and Breakdown Voltage over 3.6 kV
[ 2024-08-09 ] -
【International Papers】Plasma-modulated supercapacitive-coupled memristive behavior of two-dimensional gallium oxide channels towards the realization of tunable semiconductor–metal nanoelectronic gates
[ 2024-08-09 ] -
【International Papers】Investigating Viability of Split-Stepped Gate Field Plate Design on Ga₂O₃ MOSFET for High Power Applications
[ 2024-08-09 ] -
【Domestic Papers】Effects of polishing disc material and substrate surface temperature on the tribological behaviors and machining results of β-Ga₂O₃(100)
[ 2024-08-01 ] -
【Domestic Papers】Thermal management and switching performance of β-Ga₂O₃ vertical FinFET with diamond-gate structure
[ 2024-08-01 ] -
【Domestic Papers】Effective P-type N-doped α-Ga₂O₃ from First-Principles Calculations
[ 2024-08-01 ] -
【Domestic Papers】High-quality heteroepitaxy of ε-Ga₂O₃ films on 4H-SiC substrates via MOCVD
[ 2024-08-01 ] -
【Domestic Papers】Hydrogen-assisted chemical vapor deposition for heteroepitaxial growth of pure ε-Ga₂O₃ films
[ 2024-08-01 ] -
【International Papers】Modeling temperature dependent Ni/β-Ga₂O₃ Schottky barrier diode interface properties
[ 2024-07-25 ]
