Paper Sharing
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【International Papers】Unipolar β-Ga₂O₃ Pseudo-junction barrier Schottky diodes via Low-Cost magnesium diffusion process
[ 2025-09-15 ] -
【Domestic Papers】Synergistic LPCVD and PECVD Growth of β-Ga₂O₃ Thin Films for High-Sensitivity and Low-Dose Direct X-Ray Detection
[ 2025-09-15 ] -
【Epitaxy Papers】Effect of SiO₂ and Post-Annealed Ga₂O₃ Buffer Layers on Ga₂O₃ Thin Film Growth and Properties
[ 2025-09-15 ] -
【Epitaxy Papers】Effect of pulse time control on the structural growth characteristics and optical properties of Ga₂O₃ thin films prepared by thermal atomic layer deposition (T-ALD)
[ 2025-09-15 ] -
【Epitaxy Papers】Effect of oxygen content on p-type electrical conductivity in β-Ga₂O₃ films
[ 2025-09-15 ] -
【International Papers】Enhanced Device Characteristics of Hybrid-Channel (Poly-Si/IGO) Structures with Ga₂O₃ and Al₂O₃ Interlayers by Suppressing Oxidation-Induced Variability for Ultra-High-Density 3D NAND Flash Memory Applications
[ 2025-09-12 ] -
【Domestic Papers】The effect of O₂ high-temperature annealing on the quality of Al₂O₃/Ga₂O₃ interface
[ 2025-09-12 ] -
【Device Papers】Electro-thermal Co-design of High-power Vertical β-Ga₂O₃ Schottky Diodes with High-permittivity Dielectric Field-plate
[ 2025-09-12 ] -
【Device Papers】High power operating neuromorphic transistor based on F-doped β-Ga₂O₃ channel on Si wafers
[ 2025-09-12 ] -
【Device Papers】Analysis of the Temperature Dependence of the Capacitance of NiO/Ga₂O₃ Heterojunction Diodes Using Analytical and PSO Modelling
[ 2025-09-12 ]
