Paper Sharing
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【Device Papers】Low leakage current β-Ga₂O₃ MOS capacitors with ALD deposited Al₂O₃ gate dielectric using Ozone as precursor
[ 2025-08-04 ] -
【Device Papers】Monolithic Integrated, Reconfigurable Gallium Oxide NAND/NOR Gates with Ferroelectric AlScN Gate Stack
[ 2025-08-04 ] -
【Device Papers】Unveiling GaN/α-Ga₂O₃ interface contact barrier modulation via post-deposition annealing: DFT insights
[ 2025-08-04 ] -
【Member Papers】Radiation Effects of 500 MeV Kr⁺ ions on NiO/β-Ga₂O₃ heterojunction diodes
[ 2025-08-01 ] -
【International Papers】Polarization-dependent resonant inelastic x-ray scattering of β-Ga₂O₃: An experimental and computational study
[ 2025-08-01 ] -
【Device Papers】High performance vacuum annealed β-(AlₓGa₁₋ₓ)₂O₃/Ga₂O₃ HFET with fᴛ/fᴍᴀx of 32/65 GHz
[ 2025-08-01 ] -
【Device Papers】Wide bandgap tunable deep ultraviolet Ga₂O₃/GaN heterojunction photodetector
[ 2025-08-01 ] -
【Device Papers】High performance polycrystalline β-Ga₂O₃/GaN solar blind photodetector realized via simple one step air ambient thermal oxidation process
[ 2025-08-01 ] -
【Device Papers】Boosted Performance of Atomic-Layer-Deposited Dual-Gate Indium-Gallium-Zinc-Oxide Transistors
[ 2025-08-01 ] -
【Member Papers】Synergistic mechanism underlying the enhanced electrical performance of vertical β-Ga₂O₃ Schottky barrier diodes through proton irradiation and annealing
[ 2025-07-31 ]
