Paper Sharing
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【Device Papers】Breakdown voltage enhancement in p-GaAs/n-Ga₂O₃ heterojunction diodes with advanced termination designs
[ 2025-06-12 ] -
【Device Papers】Ultrathin Gallium Oxide as Both Surface Passivation Layer with Conductive Filament Contacts and Alternative Gate Dielectric for 2D MOSFETs
[ 2025-06-12 ] -
【Device Papers】Emerging thermal metrology for ultra-wide bandgap semiconductor devices
[ 2025-06-12 ] -
【Domestic Papers】National University of Defense Technology---Test on the Output Characteristics of Fe-β-Ga₂O₃ Photoconductive Semiconductor Device Toward High-Power Microwave Sources
[ 2025-06-11 ] -
【Epitaxy Papers】Electron-Beam-Induced Crystallization of Amorphous Gallium Oxide Thin Films Using Scanning Transmission Electron Microscopy
[ 2025-06-11 ] -
【Epitaxy Papers】Thermal annealing effects on β-Ga₂O₃/diamond (111) heteroepitaxial structures fabricated by radio frequency magnetron sputtering
[ 2025-06-11 ] -
【Epitaxy Papers】Epitaxial lateral overgrowth of c-plane α-Ga₂O₃ using a stripe mask with ultra-narrow windows
[ 2025-06-11 ] -
【Member Papers】Guilin University of Electronic Technology---Advancements in gallium-oxide-based memristors
[ 2025-06-09 ] -
【International Papers】Quantitative modeling of point defects in β-Ga₂O₃ combining hybrid functional energetics with semiconductor and processes thermodynamics
[ 2025-06-09 ] -
【Device Papers】Recent advancement in β-Ga₂O₃ MOSFETs: From material growth to device architectures for high-power electronics
[ 2025-06-09 ]
