Paper Sharing
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【Substrate Papers】First-principle calculations of the electronic structure and optical properties of β-Ga₂O₃ with various vacancy defects
[ 2024-11-25 ] -
【Substrate Papers】Growth and characterization of the β-Ga₂O₃ (011) plane without line-shaped defects
[ 2024-11-25 ] -
【Domestic Papers】Research from the South China University of Technology about Ohmic Contact Formation to β-Ga₂O₃ Nanosheet Transistors with Ar-Containing Plasma Treatment
[ 2024-11-21 ] -
【Domestic Papers】Researchers from the Research Institute of Fudan University in Ningbo investigated the influence of annealing temperature on the interfacial heat transfer in pulsed laser deposition-grown Ga₂O₃ on diamond composite substrates
[ 2024-11-21 ] -
【International Papers】Impact of Channel Thickness and Doping Concentration for Normally-Off Operation in Sn-Doped β-Ga₂O₃ Phototransistors
[ 2024-11-21 ] -
【Device Papers】Effects of NiO Doping and Trench Wall Tilt on Ga₂O₃ PiN Diodes Performance
[ 2024-11-21 ] -
【Device Papers】Analysis of deep level defects in nitrogen post-deposition annealed Ga₂O₃/SiC hetero-structured Schottky diodes grown by mist-CVD
[ 2024-11-21 ] -
【Device Papers】High-performance solar-blind photodetector of β-Ga₂O₃ grown on sapphire with embedding an ultra-thin AlN buffer layer
[ 2024-11-21 ] -
【Device Papers】Hetero-interface boosted high-performance a-Ga₂O₃ thin-film phototransistors
[ 2024-11-21 ] -
【International Papers】Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices
[ 2024-11-19 ]
