Paper Sharing
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【Member Papers】Xidian University --- 1.96 kV p-Cr₂O₃/β-Ga₂O₃ heterojunction diodes with an ideality factor of 1.07
[ 2025-04-17 ] -
【Member Papers】Dalian University of Technology --- The three dimensional model of extended defects in β-Ga₂O₃ homoepitaxial film
[ 2025-04-17 ] -
【Device Papers】High performance of self-powered Ga₂O₃:Si/p-GaN heterojunction UV photodetectors
[ 2025-04-17 ] -
【Device Papers】High-sensitive solar-blind β-Ga₂O₃ thin film photodetector deposited by PLD optimizing growth temperature
[ 2025-04-17 ] -
【Device Papers】Performance Improvement of (AlₓGa₁₋ₓ)₂O₃/Ga₂O₃ Heterostructure FET via Supercritical Isostatic Pressing-Induced Self-Redox
[ 2025-04-17 ] -
【Member Papers】1380 V β-Ga₂O₃ trench MIS-type Schottky barrier diode with ultra-low leakage current
[ 2025-04-15 ] -
【Member Papers】Southern University of Science and Technology --- Investigation of the machinability of (001) single-crystal β-Ga₂O₃ via tribological methodology
[ 2025-04-14 ] -
【Others Papers】Epitaxial growth and band energy alignment of Ga₂O₃ films on diamond (001) single crystal substrate
[ 2025-04-14 ] -
【Others Papers】Morphological and Optical Tuning of β-Ga₂O₃ NRs/p-GaN/Sapphire via Precursor Concentration for High-Performance MSM UV Photodetector Application
[ 2025-04-14 ] -
【Others Papers】Growth and ultralow thermal conductivity of beta-Ga₂O₃ nanowires
[ 2025-04-14 ]
