Paper Sharing
-
【Device Papers】Effect of Growth Conditions on the Performance of Vertically Conducting β-Ga₂O₃ Diodes on 4H-SiC Substrate
[ 2025-10-28 ] -
【Device Papers】Polycrystalline β-Ga₂O₃ Used in Neuromorphic Information Storage: Trapping Centers for Carriers Leads to Persistent Photoconductive Effect
[ 2025-10-28 ] -
【Member Papers】Plasmon-Enhanced Performance in Self-Powered Solar-Blind CuCrO₂/β-Ga₂O₃ Heterojunction Photodetectors With Al Nanoparticles
[ 2025-10-27 ] -
【International Papers】Quasi-vertical β-Ga₂O₃ Schottky diodes on sapphire using all-LPCVD growth and plasma-free Ga-assisted etching
[ 2025-10-27 ] -
【Device Papers】Thermally stable X-ray detector using β-Ga₂O₃ schottky barrier diodes in extreme environments
[ 2025-10-27 ] -
【Device Papers】Enhanced electrical performances with HZO/β-Ga₂O₃ 3D FinFET toward highly perceptual synaptic device application
[ 2025-10-27 ] -
【Device Papers】Breaking the p-type doping barrier in β-Ga₂O₃: a GaN-based heterojunction bipolar transistor with high gain, high breakdown, and RF capability
[ 2025-10-27 ] -
【Member Papers】Ultra-wide Dynamic Range 109 dB β-Ga₂O₃ Photodetector Array: Broadest Linear Response from Dim to Bright Light
[ 2025-10-24 ] -
【International Papers】Hydrogen passivation of electron traps and fixed charges in SiO₂/β-Ga₂O₃(001) MOS structures
[ 2025-10-24 ] -
【International Papers】Evidence for carrier compensation by gallium vacancies during annealing of highly Si-doped β-Ga₂O₃
[ 2025-10-24 ]
