Paper Sharing
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【Member Papers】Fudan University---Over 1.2 GW/cm² β-Ga₂O₃ SBD with Vbr of 1.93 kV realized by O₂ plasma and annealing
[ 2025-05-22 ] -
【International Papers】Vertical p-GaN/n-Ga₂O₃ heterojunction diode with high switching performance
[ 2025-05-22 ] -
【Epitaxy Papers】Effect of substrate orientation on homoepitaxial β-Ga₂O₃ films grown by HVPE
[ 2025-05-21 ] -
【Epitaxy Papers】Enhancement of Photocatalytic Performance of Ga₂O₃ Films with Different Thicknesses Under UVC Light
[ 2025-05-21 ] -
【Epitaxy Papers】Tailoring annealing duration of gallium oxide film deposited by electron beam evaporation
[ 2025-05-21 ] -
【International Papers】High breakdown voltage normally off Ga₂O₃ transistors on silicon substrates using GaN buffer
[ 2025-05-20 ] -
【International Papers】Consistent reporting of performances in Ga₂O₃ UV-C photodetectors
[ 2025-05-16 ] -
【Substrate Papers】Anisotropic mechanical properties of β-Ga₂O₃ single crystals grown by optical floating zone technique
[ 2025-05-16 ] -
【Substrate Papers】Observation of Conductive Interstitial Ga Line Defects in β-Ga₂O₃
[ 2025-05-16 ] -
【Substrate Papers】Effects of crystal and melt transparency on twisting of β-Ga₂O₃ crystals grown by the Czochralski method
[ 2025-05-16 ]
