Paper Sharing
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【Domestic Papers】High-Temperature Enhancement-Mode Ga₂O₃ Monolithic Bidirectional Switch With >6.5 kV Breakdown Voltage
[ 2026-02-28 ] -
【Member Papers】214 MW/cm² vertical β-Ga₂O₃ UMOSFETs enabled by HF sidewall treatment
[ 2026-02-28 ] -
【Device Papers】Electric field dependence of nanoscale cathodoluminescence inside Cr doped β-Ga₂O₃ interfaces
[ 2026-02-28 ] -
【Device Papers】Oxygen vacancy control engineering in Ga₂O₃/4H-SiC Schottky rectifiers
[ 2026-02-28 ] -
【Member Papers】Deciphering the mechanism of enhanced scintillation properties in In-doped β-Ga₂O₃ ultrafast scintillation crystal
[ 2026-02-27 ] -
【Epitaxy Papers】Growth of a-plane BaTiO₃ on a-plane β-Ga₂O₃ by molecular-beam epitaxy
[ 2026-02-27 ] -
【Epitaxy Papers】Bandgap Engineering of Ga₂O₃ by MOCVD Through Alloying with Indium
[ 2026-02-27 ] -
【International Papers】Two Kelvin Operation of Ultrawide-Bandgap Ga₂O₃ FinFETs and Logic Inverter Integrated Circuits
[ 2026-02-26 ] -
【Domestic Papers】Ultrahigh Responsivity β-Ga₂O₃ Solar-Blind Ultraviolet Photodetectors through In-situ Growth Pressure-Tuned Defect Engineering
[ 2026-02-26 ] -
【Others Papers】Optical Absorption and Emission in Nitrogen-Implanted Ga₂O₃ Controlled by Dynamic Defect Annealing
[ 2026-02-26 ]
