
Member News
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【Member News】Fujia Gallium Cooperation Research Achievements Listed in Materials Today Physics, High-Quality MBE Epitaxial Film Performance Comparable to the Highest International Technical Level
[ 2025-01-13 ] -
【Member News】Hangzhou GAREN SEMI Successfully Prepared 4-inch Gallium Oxide Single Crystal by VB Method (Non-Iridium Crucible)
[ 2025-01-10 ] -
【Member News】Xinhua News Agency "China Securities Journal" in-Depth Focus on Fujia Gallium, Make Scientific and Technological Innovation and Industrial Integration Run Out of the "Acceleration"
[ 2025-01-06 ] -
【Member News】Hangzhou GAREN SEMI Made a Breakthrough in Gallium Oxide Substrate Technology to Help Customers Achieve 2400V Enhanced Transistor
[ 2024-12-31 ] -
【Member News】Shanghai Institute of Microsystem and Information Technology and Nanjing Electronic Devices Institute Have Collaborated to Achieve the First Preparation of Diamond-Based Gallium Oxide Heterojunction Integrated Materials and Devices
[ 2024-12-19 ] -
【Member News】Li Shan, R&D Director of GAO SEMI: Research on the Epitaxial Growth by PECVD and Photoelectric Information Sensing Devices of Gallium Oxide
[ 2024-12-17 ] -
【Member News】Research Progress and Technical Planning of Ultra-Wide Bandgap Semiconductor Technology by the Research Team of Shenzhen Pinghu Laboratory
[ 2024-12-13 ] -
【Member News】Hangzhou Fujia Gallium Oxide Epitaxial Wafer Passed Two Rounds Device Verification, Has Significant International Competitive Advantages
[ 2024-12-09 ] -
【Member News】New Progress ︱ Hangzhou GAREN SEMI Realizes the Growth of 2 Inch N-Type Gallium Oxide Single Crystal by Czochralogon Method
[ 2024-12-02 ] -
【Member News】Shenzhen Pinghu Laboratory has Made Important Progress in Theoretical Research of Gallium Oxide
[ 2024-11-25 ]