Member News
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【Member News】The Project "Research and Development of High-Performance Solar-Blind Ultraviolet Photoelectric HEMT Devices Based on κ-Ga₂O₃" of Tianjin University of Technology Have Successfully Received Project Support from the Tianjin Science and Technology Bureau
[ 2025-07-08 ] -
【Member News】Shenzhen Pinghu Laboratory Has been Approved to Establish a "Postdoctoral Innovation Practice Base"
[ 2025-07-02 ] -
【Member News】Shenzhen Pinghu Laboratory Made Debut at the 2025 China (Shenzhen) Integrated Circuit Summit and was Awarded the Outstanding Contribution Award
[ 2025-07-02 ] -
【Member News】Qi Hongji, the founder of Fujia Gallium Honored with the "Innovative Figure Award for Industry, Education and Research Cooperation" of Zhejiang Province in 2024
[ 2025-06-27 ] -
【Member News】GAREN SEMI Achieves Wafer-Scale Production of 6-Inch Off-Cut Gallium Oxide Substrates
[ 2025-06-26 ] -
【Member News】The World's First Production Line for Ultra-Wide Bandgap Semiconductor High-Frequency Filter Chips Enters Trial Production Phase
[ 2025-06-18 ] -
【Member News】China Resources Microelectronics Limited Leads Review Meetings for Draft Group Standards:"Non-Destructive XRT Detection of Defects in Gallium Oxide Materials"
[ 2025-06-17 ] -
【Member News】GAREN SEMI Leads Review Meetings for Draft Group Standards:"Testing Method for Dislocation Density of Gallium Oxide Single Crystal" and "β-Phase Gallium Oxide Homoepitaxial Wafer"
[ 2025-06-13 ] -
【Member News】 New Breakthrough | GAREN SEMI Successfully Prepared 100mm (010) planar Gallium Oxide Single Crystal Substrate by VB Method
[ 2025-06-12 ] -
【Member News】Fujia GalliumMOCVD-Grown Gallium OxideHomoepitaxial Films Reach New Highin Performance
[ 2025-06-09 ]
