Member News
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【Member News】High-quality 4-inch gallium oxide single crystal is successfully prepared via casting process by research team of Hangzhou International Science and Technology Innovation Center of Zhejiang University
[ 2023-09-08 ] -
【Member News】Beijing GAO Semiconductor Co.,Ltd received new financing
[ 2023-08-11 ] -
【Member News】Research progress in Gallium oxide materials and power devices by Mr. He Yunlong and his team from Xidian University
[ 2023-08-04 ] -
【Member News】Mitsubishi Electric and Taiyo Nippon Sanso Corporation invested in NCT, an important step in the commercialization of gallian oxide devices
[ 2023-08-04 ] -
【Member News】New research by Professor Han Genquan, Xidian University: Heterointegration technology realizes thermal management of gallium oxide electronic devices
[ 2023-07-31 ] -
【Member News】Zhang Hongliang's team from Xiamen University has made progress in gallium oxide semiconductor bandgap engineering and solar-blind ultraviolet photodetectors
[ 2023-07-21 ] -
【Member News】The fourth-generation Semiconductor Gallium Oxide Material Project of Tongji University was Signed and Landed
[ 2023-07-18 ] -
【Member News】New Research on NCT——Nitrogen-doped β-Ga₂O₃ vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100cm²V⁻¹s⁻¹
[ 2023-07-07 ] -
【Member News】The research results of Yue Hao’s team on β-Ga₂O₃ power devices have been published in Applied Physics Letters
[ 2023-07-07 ] -
【Member News】Fabrication of nanocrystalline Ga₂O₃-NiO heterojunctions for large-area low-dose X-ray imaging in Sun Yat-sen University
[ 2023-07-07 ]
