【Member Intro】Inside Third- and Fourth-Generation Semiconductor Crystal Growth and Advanced Equipment Company: Shandong Jingsheng Electronics Technology Co., Ltd.

Shandong Jingsheng Electronic Technology Co., Ltd.

      Shandong Jingsheng Electronic Technology Co., Ltd., located in Jinan—known as the “City of Springs”—is a high-tech enterprise specializing in the R&D and manufacturing of wide-bandgap semiconductor equipment. The company’s main products include high-end equipment for third- and fourth-generation semiconductors, as well as various crystal growth systems.

      To date, the company has obtained ISO 9001 quality management system certification and has been recognized as a National High-Tech Enterprise, a Shandong “Specialized and New” Enterprise, and a Shandong Gazelle Company. With multiple independently developed intellectual property rights, it has become a key representative supplier of critical equipment in the industry.

PVT-SiC-400 Crystal Growth Furnace

      ●Suitable for 6–12 inch conductive and high-purity semi-insulating SiC crystal growth

      ●Features high-precision temperature and pressure control, excellent process performance, and strong equipment consistency

      ●Extensive mass production experience

      ●Optional operation modes: constant power, constant current, and constant temperature

      ●Equipped with high-precision butterfly valves and mass flow controllers for stable growth atmosphere control

      ●Pressure control accuracy up to ±1 Pa during crystal growth

HVPE (Hydride Vapor Phase Epitaxy) Reactor for Gallium Oxide

      ●High growth rate and low defect density

      ●High lateral and vertical growth ratio with minimal voids, enabling large-area thick film growth

      ●Epitaxial growth rate: >20 μm/h

      ●Ga₂O₃ heteroepitaxy thickness: >10 μm

      ●Wafer sizes: 2 / 4 / 6 / 8 inches

EFG Crystal Growth Furnace (Edge-defined Film-fed Growth)

      ●Enables EFG growth of ultra-wide bandgap single-crystal semiconductor materials

      ●Uses high-frequency heating with specially designed thermal field structure

      ●Supports 2 / 4 / 6 / 8 inch single-crystal growth

      ●Customizable according to user requirements

VB Crystal Growth Furnace (Gallium Oxide)

      ●Temperature range: 100–1830°C

      ●Imported heating elements with temperature accuracy up to ±0.5°C

      ●Crucible rotation function with adjustable speed and direction

      ●Supports 2 / 4 / 6 / 8 inch single-crystal growth

      ●Customizable features available based on customer needs