【Device Papers】Characterizing Carrier Traps in Ga₂O₃ Schottky Barrier Diodes Using the Current Transient Method

      Researchers from the Beijing University of Technology have published a dissertation titled "Characterizing Carrier Traps in Ga₂O₃ Schottky Barrier Diodes Using the Current Transient Method" in IEEE Transactions on Electron Devices.

Abstract

      Interfacial and internal traps are the main factors limiting the performance and reliability of Ga₂O₃ Schottky barrier diodes (SBDs). Herein, the trap characteristics of Ga₂O₃ SBDs are investigated using the current transient method, elucidating the carrier trapping and detrapping processes. Under the forward and negative voltage stress, different traps can capture electrons from various sources. The test results show that there are five different types of electronic traps in the Ga₂O₃ device, and each trap corresponds to a different time constant, activation energy, and location. The activation energies of these traps are 0.089, 0.2, 0.81, and 0.95 eV, respectively. In addition, there exists a temperature-independent electronic trap whose behavior may be related to the direct tunneling process. Therefore, this method can be applied to the reliability study of Ga₂O₃ to achieve nondestructive characterization of Ga₂O₃ SBD traps.

DOI：

10.1109/TED.2026.3655637