【Epitaxy Papers】Engineering Optoelectronic Properties in Gallium Oxide/Gallium Nitride Heterostructures via Post-rapid Thermal Annealing Temperature Modulation

      Researchers from the Universiti Sains Malaysia have published a dissertation titled " Engineering Optoelectronic Properties in Gallium Oxide/Gallium Nitride Heterostructures via Post-rapid Thermal Annealing Temperature Modulation " in Ceramics International.

Abstract

      The study investigates the influence of post-rapid thermal annealing (PRTA) on the morphological, structural, and optoelectronic properties of β-Ga₂O₃/GaN heterostructures. β-Ga₂O₃ films were deposited on GaN/sapphire substrates by electron beam evaporation and annealed at temperatures ranging from 700 to 900 °C. Atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) analyses indicate that annealing at 800 °C yielded the smoothest surface. X-ray diffraction (XRD) results corroborate this observation, demonstrating enhanced crystallinity, as evidenced by the lowest full width at half maximum (FWHM), strain, and dislocation density at this temperature. Furthermore, optical analysis reveals improvements in absorption, refractive index, and mobility at 800 °C, accompanied by decreased resistivity and sheet resistance. These findings underscore that a controlled PRTA significantly enhances the quality of β-Ga₂O₃/GaN films, positioning them as promising candidates for advanced optoelectronic device applications.

DOI：

https://doi.org/10.1016/j.ceramint.2026.03.180