Member News
【Member News】Exhibitor Spotlight at the 2026 Semiconductor New Materials Development (Deyang) Conference | Wonder-sino Group
日期：2026-03-30阅读：51
Group Profile
Wonder-sino Group upholds the philosophy of “leading with advanced technology and connecting the world through gallium,” and remains committed to providing customers in the wide bandgap semiconductor industry with globally advanced materials, equipment, and process technologies.
As one of the earliest companies in China to strategically deploy and commercialize fourth-generation semiconductor (Gallium Oxide) materials and equipment, Wonder-sino has continuously integrated industry technologies and resources to deliver comprehensive “materials + equipment + process” solutions.
Through a combination of technology introduction and in-house R&D, the company has established deep collaborations with leading domestic universities and research institutes, while working closely with industry-leading enterprises to tackle key technical challenges. By precisely addressing critical bottlenecks in industrialization, Wonder-sino is actively building a Gallium Oxide industrial ecosystem and accelerating the transition of Gallium Oxide materials from laboratory research to large-scale commercial applications.
Main products
01 Gallium Oxide Substrates and Epitaxial Wafers
Our company specializes in customized supply and services for Gallium Oxide substrates and epitaxial wafers, covering a wide range of crystal orientations and precise doping solutions. With high crystal quality, excellent uniformity, and reliable stability, our products empower innovation in ultra-wide bandgap semiconductor devices, supporting both R&D prototyping and volume production.Mass-produced Gallium Oxide substrates and epitaxial wafers include:
R&D-grade Gallium Oxide substrates include:
02 Gallium Oxide Raw Materials
High-purity, high-quality raw materials specifically tailored for Gallium Oxide single-crystal growth, including 5N-grade granules and 4N-grade compact feedstock. Manufactured with advanced processing techniques, these materials enhance crystal growth efficiency and quality, serving as a key foundation for the scalable production of high-quality Gallium Oxide crystals.
03 SAM Substrates
Product Features
Low lattice mismatch with GaN, as low as 1.8%, ensuring excellent compatibility.
Good lattice matching with InGaN.
Minimal difference in thermal expansion coefficient with GaN (only 0.6%), providing outstanding thermal stability.
Epitaxy-ready substrates can be prepared via cleaving processes.
Enables the growth of high-quality crystals with low or no dislocations.
Achieves crystal quality comparable to silicon (Si).
Applications
Used as a high-performance substrate material for GaN epitaxial growth, enabling the fabrication of high-quality freestanding substrates.
04 Ni Crystals
Product Features
High-purity single-crystal materials produced using a unique Czochralski (CZ) growth process.
Scalable large-diameter production, supporting customized ingots of Φ6 inch and Φ8 inch.
Low lattice mismatch with graphene, as low as 1.3%, ensuring excellent compatibility.
Applications
Suitable for epitaxial growth of diamond, graphene, GaN, and other materials, serving as an ideal substrate for the fabrication of high-performance freestanding substrates.
05 Fe–Ga Alloy
Product Features
High-quality single-crystal materials produced via both Czochralski (CZ) and Vertical Bridgman (VB) methods, enabling large-size crystal growth.
Excellent magnetostrictive performance, with magnetostriction ≥ 300 ppm.
High durability and excellent machinability.
Wide operating temperature range, suitable for various working environments.
Precisely controllable crystal growth orientation, with preferred ⟨100⟩ orientation.
Applications
Enables efficient vibration-based energy harvesting based on the magnetostrictive effect, significantly improving power generation endurance and energy conversion efficiency, and providing core material support for advanced sensing, actuation, and energy harvesting systems.
Contact Us
Address: Room 2412, China Overseas Plaza, Intersection of Weijin South Road and Wujiayao Street, Hexi District, Tianjin, China
Contact Person: Mr. Shen
Tel: +86-22-28219577
Mobile: +86-138-2057-6818
Email: st@wonder-sino.com
Website: www.wonder-sino.com
