【Member News】Sunwise Semiconductor Chief Scientist Wang Gang: Gallium Oxide Heteroepitaxial Growth on Silicon Substrates and Applications

      Heteroepitaxial Growth of Gallium Oxide on Silicon Substrates leverages silicon’s low cost and large-size advantages to overcome the bottlenecks in Gallium Oxide substrate fabrication, accelerating its industrialization. This represents a major breakthrough in materials science and is a key strategic step toward achieving autonomous control and securing the high ground of next-generation technology in the power semiconductor sector. Despite challenges such as lattice mismatch and differences in thermal expansion between Gallium Oxide and silicon, as the technology matures, silicon-based Gallium Oxide is expected to achieve large-scale application first in cost-sensitive areas, becoming an important force in the power semiconductor market.

      Recently, at the 11th International Forum on Wide Bandgap Semiconductors & the 22nd China International Forum on Solid State Lighting (IFWS & SSLCHINA 2025), Professor Wang Gang, Chief Scientist of Fujian Sunwise Semiconductor Technology Co., Ltd. and a faculty member at Sun Yat-sen University, was invited to present a keynote report titled “Heteroepitaxial Growth of Gallium Oxide on Silicon Substrates and Applications” in the “Ultra-Wide Bandgap Semiconductor Technology” session. His presentation covered large-size silicon-based Gallium Oxide epitaxy, silicon-based Gallium Oxide devices, and applications.

      In his report, Professor Wang introduced that by employing a two-step growth method and using H₂O as the oxygen source, six-inch silicon-based ε-Gallium Oxide heteroepitaxial films were successfully grown on AlN/Si(111). By incorporating Gallium Oxide superlattice technology and adjusting process parameters, the residual stress and domain growth of silicon-based ε-Gallium Oxide were effectively controlled. Using substrate transfer techniques, silicon-based ε-Gallium Oxide thin-film POI substrates were successfully fabricated, and ε-Gallium Oxide SMR (surface acoustic wave resonator) devices were produced.

      Looking forward, Professor Wang highlighted that further research is needed to achieve large-size single-domain silicon-based ε-Gallium Oxide growth, produce high-quality ε-Gallium Oxide single-crystal thin films exploiting the strong spontaneous polarization of ε-Gallium Oxide, and realize ε-AlGaO₃/Gallium Oxide-HEMT devices.

Company Profile

      Fujian Sunwise Semiconductor Technology Co., Ltd. (referred to as “Sunwise Semiconductor”) is located in Shanghang County, Fujian Province—a site historically significant for the Gutian Congress. With the mission of “Enabling High-Quality Life with Chips,” the company is dedicated to building an ecosystem for third- and fourth-generation compound semiconductor chips. Its Gallium Oxide ultra-wide bandgap material fabrication technology is internationally leading, and Sunwise is the world’s first company capable of delivering Gallium Oxide-based eBAW filter chips, producing third-generation high-frequency bulk acoustic wave (BAW) filters, filling a domestic gap.

      Sunwise Semiconductor is a global leader in optoelectronic integrated chips (OEIC) and wide-bandgap compound semiconductor epitaxial thin-film materials, with Gallium Oxide wafer fabrication technology at the forefront internationally. The company has won the top “Excellence Award” at the National Disruptive Technology Innovation Competition and undertakes key R&D projects under China’s Ministry of Science and Technology. It has successfully developed high-quality Gallium Oxide heteroepitaxial growth processes, achieving large-scale production of six-inch silicon-based Gallium Oxide single-crystal piezoelectric thin-film wafers—the first enterprise globally to obtain high-quality, large-size silicon-based Gallium Oxide wafers. Sunwise provides comprehensive solutions for Gallium Oxide single-crystal thin-film heterogeneously bonded wafer materials (POI) and high-frequency, high-power, wide-bandwidth filters, with applications across 5G/6G communications, IoT, aerospace, new energy vehicles, advanced manufacturing, rail transit, and radar systems.

      Looking ahead, Sunwise will focus on two industrial sectors—optoelectronic integration and Gallium Oxide RF chips—to drive the steady development of high-end chip manufacturing, aspiring to become a world-leading company in compound semiconductor chip R&D, manufacturing, and services.