【Device Papers】Novel Superheterojunctions for Ultra-Low Resistance Ga₂O₃ and GaN Power Switches

      Researchers from the University of California have published a dissertation titled "(Invited) Novel Superheterojunctions for Ultra-Low Resistance Ga₂O₃ and GaN Power Switches" in ECS Meeting Abstracts.

Abstract

      Charge balanced drift layers in power devices enable the use of highly doped drift layers to drastically reduce the on-resistance of power switches, significantly lowering the conduction losses. In conventional Si-based superjunction devices, alternate columns of n-type and p-type materials are used with carefully designed aspect ratios and net charge balance, imposing stringent process and doping control requirements. In this talk, we will present two innovative approaches implemented in Ga₂O₃ and GaN power diode structures which can surpass the unipolar figure of merit. First we introduce, the lateral dielectric superjunction Schottky barrier diode (SBD), where the electric field within the drift layer is modified from triangular to rectangular profile, enhancing the breakdown voltage and enabling the use of higher drift layer doping to reduce on-resistance. Next, we discuss p-NiO/n-GaN and p-NiO/p-GaN/n-GaN lateral superheterojunction structures for enhanced breakdown in lateral GaN diodes, which can be extended to transistors for enhanced breakdown and lower on-resistance.

DOI：

https://doi.org/10.1149/MA2025-02351715mtgabs