【Device Papers】Energy band alignment of MoSe₂/β-Ga₂O₃ heterojunctions for optimization of day-blind detectors

      Researchers from the University of North China Electric Power have published a dissertation titled "Energy band alignment of MoSe₂/β-Ga₂O₃ heterojunctions for optimization of day-blind detectors" in 2025 International Conference on Advanced Materials and Aerospace Structural Mechanics (AMASM 2025).

Abstract

      We have synthesized vertically stacked MoSe₂/β-Ga₂O₃ heterostructures by CVD and investigated the band alignment at the heterostructure interface using XPS techniques. The valence band offsets (ΔE_v) of the heterostructures were obtained from the respective XPS peak positions and valence band spectra using the Kraut equation. Based on the offsets, an energy band alignment schematic was constructed, indicating that the MoSe₂/β-Ga₂O₃ heterostructures synthesized by CVD are type I band aligned. Based on the heterostructure, we designed and fabricated a day-blind detector. The MoSe₂/β-Ga₂O₃ heterostructures have obvious improvement in contact quality, response speed, decay speed, and signal stability compared with the pure β-Ga₂O₃ day-blind detectors. The results demonstrate that the heterostructure can successfully extend the photodetection range of the two-dimensional material to the deep ultraviolet wavelength band. We believe that the study of band alignment of MoSe₂/β-Ga₂O₃ heterostructures can provide a promising strategy for high-speed and broadband photodetectors.

DOI：

https://10.1088/1742-6596/3141/1/012008