【Member News】Fujia Gallium Showcases Core Gallium Oxide Achievements at APCSCRM 2025

      From November 25–27, 2025, the 6th Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2025) was successfully held at the Zhengzhou Zhongyuan International Exhibition Center in Henan Province. As a leading enterprise at the forefront of Gallium Oxide industrialization, Hangzhou Fujia Gallium Technology Co., Ltd. (“Fujia Gallium”) presented its key technological achievements and solutions at the event. The booth drew significant attention from upstream and downstream industry partners and became one of the major highlights of the exhibition, attracting numerous experts for in-depth technical discussions.

      Given the unique importance of Gallium Oxide in the ultrawide-bandgap semiconductor field, the conference organizers specially arranged a VIP exhibition area to spotlight Fujia Gallium’s breakthroughs, including Gallium Oxide single-crystal growth equipment, single-crystal substrates, and homoepitaxial wafers. The newly released 6-inch vertical Ga₂O₃ SBD wafer, showcased for the first time at this conference, further demonstrated the company’s full-chain technological strengths spanning single-crystal growth, epitaxy, and device-level validation.

      Several prominent experts and industry leaders visited the Fujia Gallium booth for technical guidance and discussion. Distinguished guests included Researcher Xu Ke of the Suzhou Institute of Nano-Tech and Nano-Bionics, CAS; Chief Expert Huang Cunxin of Sinoma Advanced Materials Co., Ltd.; and Dr. Liu Chunjun, CTO of TanKeBlue Semiconductor Co., Ltd. These top-tier experts engaged in in-depth exchanges with the Fujia Gallium team, offering high recognition for the company’s efforts and achievements in bridging Gallium Oxide scientific research and industrialization. They also discussed future development directions of Gallium Oxide technology, opportunities for collaborative innovation across the value chain, and provided valuable insights for the company’s growth.

Highlights

      This trip to APCSCRM 2025 served not only as an important platform for FuJia Gallium to showcase its Gallium Oxide products and solutions, but also as a key opportunity for the company to connect with global resources and integrate more deeply into the industry ecosystem.

      Looking ahead, FuJia Gallium will continue to take technological innovation as its core driving force, persistently tackling the key challenges in the industrialization of Gallium Oxide, and strengthening collaborative cooperation across the entire industry chain. The company is committed to contributing more strength to advancing the wide-bandgap semiconductor industry toward higher efficiency, greener development, and smarter innovation.

Product Introduction

Equipment:

      The company has developed the world's first EFG equipment equipped with "one-click crystal growth", which can meet the growth requirements of 2-6-inch crystals. Currently, it has obtained 6 domestic authorized patents and 4 international authorized patents, and can provide equipment and supporting process packages.

      The company independently developed fully automatic VB crystal growth equipment and was the first in China to break through the technical bottleneck of 6-inch single crystal growth, achieving the preparation of large-sized VB single crystal. At present, 6 domestic patents and 4 international patents are granted, and VB equipment and process packages can be provided according to customer requirements.

Single-Crystal Substrates:

      As one of the earliest pioneers in China engaged in Gallium Oxide single-crystal growth research and a leading supplier in the industry, we are committed to providing high-quality Gallium Oxide single-crystal substrates to customers worldwide. Our product portfolio covers 2–6 inch substrates across 26 standard Gallium Oxide substrate types, and we also offer customized solutions in terms of size, electrical properties, and crystal orientation to meet the requirements of high-quality epitaxial wafer development and mass production.

Epitaxial Wafers:
      Built upon mature MOCVD (Metal-Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy) technology platforms, our product line includes 2–6 inch Gallium Oxide epitaxial wafers across 15 standard specifications as well as customized MBE-based epitaxial wafers. We provide customers with an integrated “substrate–epitaxy” solution.
      During epitaxial growth, a precisely controlled process system is employed to customize key parameters such as epitaxial layer thickness, doping concentration, and compositional uniformity according to customer needs, enabling support for R&D and production of devices across different power levels and functional applications.

About Hangzhou Fujia Gallium

      Hangzhou Fujia Gallium Technology Co., LTD., founded on December 31, 2019, is the first "hard technology" enterprise registered by Hangzhou Institute of Optics and Fine Mechanics. With the vision of "Making the World Use Good Materials", the company focuses on the industrialization work of wide bandgap semiconductor Gallium Oxide materials. The core products include Gallium Oxide single crystal substrates, MOCVD epitaxial wafers, MBE epitaxial wafers, The VB method and EFG method crystal growth equipment, substrate grinding and polishing equipment, etc. provide systematic solutions for material development, accelerate the full chain connection of the ultra-wide bandgap Gallium Oxide industry, and promote the application of Gallium Oxide materials in power devices, microwave and radio frequency devices, and optoelectronic detection fields.The company's series of important achievements in the development of Gallium Oxide have been featured and reported by well-known media such as People's Daily, Xinhuanet, China Securities News, and The Paper.

Corporate Honors:

      In 2022, it won the Zhejiang Province Science and Technology Small and Medium-Sized Enterprise; National High-Tech Enterprise in 2023; In 2024, it will be awarded as Hangzhou Enterprise High-Tech Research and Development Center and Zhejiang Special Small and Medium-Sized Enterprise. Obtain ISO9001 quality system certification in 2025 (No. 20225Q20294R0M) and 2024 Hangzhou “Rising Eagle” Enterprise. It undertook one Gallium Oxide project for the National Development and Reform Commission and participated in three national and provincial projects from the Ministry of Science and Technology, Zhejiang Province, and Shanghai. In addition, it has obtained 12 international patents authorized (6 in the United States and 6 in Japan), 40 domestic patents authorized, 3 trademark certification and registration of "Fujia Gallium", and 4 software copyrights (crystal growth control software of "one-click crystal growth").