【Member News】From Existence to Practical Application: 6-inch Vertical Gallium Oxide SBD Wafers Debut at APCSCRM 2025

     On November 25, 2025, the 6th Asia Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2025) grandly opened at the Zhengzhou Zhongyuan International Exhibition Center. As the premier event in the field of wide-bandgap semiconductors in the Asia-Pacific region, this year’s conference brought together 113 leading enterprises and research institutes across the global industry chain, including CRRC, State Grid Corporation of China, Infineon, and the University of Tsukuba. Participants engaged in in-depth discussions on new development pathways across four key dimensions: material breakthroughs, device innovation, system integration, and industrial applications. Mr. Qi Hongji, Chairman of Hangzhou Fujia Gallium Technology Co., Ltd. (hereinafter referred to as Fujia Gallium), was invited to deliver a keynote talk titled “Bridging the Gap from Gallium Oxide Research to Industrialization: From Existence to Practical Application.” His presentation offered a comprehensive analysis of a series of breakthrough achievements that have enabled Gallium Oxide materials to progress from laboratory research toward industrial deployment. During the keynote session, Mr. Qi officially unveiled the 6-inch vertical Gallium Oxide SBD wafer, a major highlight that drew significant attention from the industry. The keynote session was chaired by Academician Chen Xiaolong.

     Fujia Gallium is committed to the mission of “Bringing High-Quality Materials to the World” and is actively advancing the industrialization of Gallium Oxide substrates, epitaxy, and devices both domestically and internationally. The newly released 6-inch vertical Gallium Oxide SBD wafer is based on the company’s independently developed high-mobility homoepitaxial Gallium Oxide layers and was jointly fabricated with downstream device partners.

     The wafer includes four chip dimensions: 3.0 × 3.0 mm², 1.0 × 1.0 mm², 0.5 × 0.5 mm², and φ0.1 mm. Standard 3 mm edge-exclusion processes were adopted during fabrication, and scribe lines were reserved for subsequent chip dicing. The public release of the 6-inch vertical Gallium Oxide SBD wafer at the conference marks a significant milestone in Fujia Gaea’s collaboration with downstream device customers, demonstrating substantial progress in establishing a full-chain technical pathway from material preparation to large-scale device fabrication—realizing the industrial leap of Gallium Oxide “from existence to practical application.” Looking ahead, the company will continue to prioritize technological innovation and accelerate the large-scale application of Gallium Oxide devices in high-end scenarios.

     The APCSCRM 2025 conference brought together leading experts who delivered keynote presentations, and Fujia Gallium’s product launch became a significant milestone on the Gallium Oxide industrialization trajectory. During the event, numerous downstream customers engaged in in-depth discussions on technical details and collaboration models related to 6-inch SBD device fabrication, resulting in multiple cooperation intentions.

     As a leading enterprise in the global Gallium Oxide industry, Fujia Gallium consistently drives the industrialization of Gallium Oxide materials through technological innovation. The jointly released 6-inch vertical Gallium Oxide SBD wafer not only highlights the company’s technological leadership in the field of fourth-generation semiconductors, but also responds to the growing global demand for high-efficiency and energy-saving semiconductor devices. With China’s rapid development of new energy technologies, power devices will experience explosive growth across energy generation, storage, transmission, and utilization. As a representative material of fourth-generation semiconductors, Gallium Oxide is expected to see exponential market expansion in the next three years. The 6-inch vertical SBD wafer is poised to serve as a key indicator for the large-scale application of Gallium Oxide devices in the power electronics sector.

Product Introduction

Equipment:

     The company has developed the world's first EFG equipment equipped with "one-click crystal growth", which can meet the growth requirements of 2-6-inch crystals. Currently, it has obtained 6 domestic authorized patents and 4 international authorized patents, and can provide equipment and supporting process packages.

     The company independently developed fully automatic VB crystal growth equipment and was the first in China to break through the technical bottleneck of 6-inch single crystal growth, achieving the preparation of large-sized VB single crystal. At present, 6 domestic patents and 4 international patents are granted, and VB equipment and process packages can be provided according to customer requirements.

Single-Crystal Substrates:

     As one of the earliest pioneers in China engaged in Gallium Oxide single-crystal growth research and a leading supplier in the industry, we are committed to providing high-quality Gallium Oxide single-crystal substrates to customers worldwide. Our product portfolio covers 2–6 inch substrates across 26 standard Gallium Oxide substrate types, and we also offer customized solutions in terms of size, electrical properties, and crystal orientation to meet the requirements of high-quality epitaxial wafer development and mass production.

Epitaxial Wafers:
     Built upon mature MOCVD (Metal-Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy) technology platforms, our product line includes 2–6 inch Gallium Oxide epitaxial wafers across 15 standard specifications as well as customized MBE-based epitaxial wafers. We provide customers with an integrated “substrate–epitaxy” solution.
During epitaxial growth, a precisely controlled process system is employed to customize key parameters such as epitaxial layer thickness, doping concentration, and compositional uniformity according to customer needs, enabling support for R&D and production of devices across different power levels and functional applications.

About Hangzhou Fujia Gallium

     Hangzhou Fujia Gallium Technology Co., LTD., founded on December 31, 2019, is the first "hard technology" enterprise registered by Hangzhou Institute of Optics and Fine Mechanics. With the vision of "Making the World Use Good Materials", the company focuses on the industrialization work of wide bandgap semiconductor Gallium Oxide materials. The core products include Gallium Oxide single crystal substrates, MOCVD epitaxial wafers, MBE epitaxial wafers, The VB method and EFG method crystal growth equipment, substrate grinding and polishing equipment, etc. provide systematic solutions for material development, accelerate the full chain connection of the ultra-wide bandgap Gallium Oxide industry, and promote the application of Gallium Oxide materials in power devices, microwave and radio frequency devices, and optoelectronic detection fields.The company's series of important achievements in the development of Gallium Oxide have been featured and reported by well-known media such as People's Daily, Xinhuanet, China Securities News, and The Paper.

     Corporate Honors:

     In 2022, it won the Zhejiang Province Science and Technology Small and Medium-Sized Enterprise; National High-Tech Enterprise in 2023; In 2024, it will be awarded as Hangzhou Enterprise High-Tech Research and Development Center and Zhejiang Special Small and Medium-Sized Enterprise. Obtain ISO9001 quality system certification in 2025 (No. 20225Q20294R0M) and 2024 Hangzhou “Rising Eagle” Enterprise. It undertook one Gallium Oxide project for the National Development and Reform Commission and participated in three national and provincial projects from the Ministry of Science and Technology, Zhejiang Province, and Shanghai. In addition, it has obtained 12 international patents authorized (6 in the United States and 6 in Japan), 40 domestic patents authorized, 3 trademark certification and registration of "Fujia Gallium", and 4 software copyrights (crystal growth control software of "one-click crystal growth").