【Device Papers】Low-Power Scan Driver Circuit Employing Threshold Voltage Modulation With Double-Gate Indium–Gallium–Zinc Oxide Thin-Film Transistors

      Researchers from the Sungkyunkwan University have published a dissertation titled "Low-Power Scan Driver Circuit Employing Threshold Voltage Modulation With Double-Gate Indium–Gallium–Zinc Oxide Thin-Film Transistors" in IEEE Transactions on Electron Devices.

Abstract

      This article proposes a novel low-power scan driver circuit using double-gate (DG) amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs). For low power consumption, the threshold voltage (VTH) modulation method with DG TFTs is adopted, enabling enhancement-mode operation. The functionality of the designed circuit was verified through experimental measurements and supported by simulations. By implementing a VTH modulation mechanism, the proposed circuit exhibits only a 23.9% increase in power consumption under a VTH shift of −3 V. It shows much lower sensitivity to negative VTH variation compared to single-gate (SG) TFT-based circuits. Therefore, the proposed circuit ensures stable and consistent low-power operation.

DOI：

https://doi.org/10.1109/TED.2025.3625948