【Substrate Papers】Numerical simulation of induction skull melting process of gallium oxide compounds

      Researchers from the Tsinghua University have published a dissertation titled "Numerical simulation of induction skull melting process of gallium oxide compounds" in Journal of Crystal Growth.

Abstract

      As a typical wide-bandgap semiconductor, Gallium oxide (Ga₂O₃) crystal is an ideal substrate material for power and deep-ultraviolet devices. The traditional growth process for Ga₂O₃ single crystal requires extremely expensive Ir crucibles, which greatly hinders its application and development. This article aims to develop the induction skull melting (ISM) process for high-purity melting and single crystal growth of Ga₂O₃, without iridium crucible. Based on the multi-field coupling model, a systematical simulation was conducted to study the effect of frequency and magnitude of the induction power on the temperature evolution, the fluid flowing pattern, the meniscus shape, and the skull morphology. Simultaneously, the ignition and solidification process were also displayed. There is a good agreement between the theoretical calculations and the experimental results. The studied results demonstrate that the ISM process has the potential for the melting and growth of Ga₂O₃ single crystal.

DOI：

https://doi.org/10.1016/j.jcrysgro.2025.128409