【Device Papers】Radiation Damage Mechanisms in β-Ga₂O₃ MSM Solar-Blind Photodetectors: Insights From Proton, Neutron, and γ -Ray Irradiation

      Researchers from the Zhejiang Sci-Tech University have published a dissertation titled "Radiation Damage Mechanisms in β-Ga₂O₃ MSM Solar-Blind Photodetectors: Insights From Proton, Neutron, and γ -Ray Irradiation" in IEEE Electron Device Letter.

Abstract

      Spacecraft that traverse the magnetosphere of Earth encounter intense radiation consisting of high-energy protons, heavy ions, and γ -rays, which introduces complex radiation damage risks to electronic devices onboard. This study systematically investigates the effects of proton, neutron, and γ -ray irradiation on the optoelectronic performance of β-Ga₂O₃ MSM solar-blind photodetectors. By correlating material property evolution with device performance degradation, the damage mechanisms induced by different radiation sources are elucidated. The proton irradiation introduces shallow-level defects via synergistic displacement and ionization damage, while neutron irradiation predominantly generates Frenkel defects through displacement damage. In contrast, γ-ray irradiation induces rapid accumulation of V_O at interfaces due to ionization damage, leading to a significant reduction in the Schottky barrier height. Photoelectric characterization demonstrates that β-Ga₂O₃ photodetectors exhibit superior radiation tolerance to protons and neutrons compared to γ -rays. These findings provide critical theoretical guidance for designing radiation-hardened β-Ga₂O₃ solar-blind detectors in space radiation environments.

DOI：

https://doi.org/10.1109/LED.2025.3605225