【Device Papers】Gate-Tunable Logic and Memory Inversion via Field-Effect and Conductive Filament Switching in Ga₂O₃ Synaptic Devices

      Researchers from the Tech University of Korea have published a dissertation titled " Gate-Tunable Logic and Memory Inversion via Field-Effect and Conductive Filament Switching in Ga₂O₃ Synaptic Devices " in Materials Today Physics.

Abstract 

      Three-terminal optoelectronic synaptic devices typically rely on field-effect (FE) modulation for analog memory functions. Here, we propose a novel filamentary-gate-controlled architecture based on a vertical Pt/Ga₂O₃/Pt structure, enabling logic-memory integration and gate-driven polarity inversion. By inducing conductive filaments (CFs) between the gate and channel regions, the device exhibits a transition from conventional FE to CF-based gate control, unlocking reconfigurable logic behavior and programmable synaptic plasticity. Logic inversion (OR ↔ AND) is achieved by tuning gate polarity and switching between FE and CF states. Moreover, gate-controlled visual memory experiments demonstrate contrast-reversible image retention depending on device state and gate bias direction. This dual-mode device platform offers a scalable path toward low-power neuromorphic and in-sensor computing architectures.

DOI：

https://doi.org/10.1016/j.mtphys.2025.101894