【Conference Information】2025 Wide Band Gap Semiconductor Technology and Application Development Summit Forum：Comprehensive Overview of the Entire Process

Conference Introduction

      New Materials determine new devices! As traditional silicon semiconductors approach their performance limits, wide bandgap semiconductors such as GaAs, SiC, and GaN are gaining widespread application, and a new generation of wide bandgap semiconductor materials is reshaping the semiconductor technology landscape. Gallium Oxide is a prominent representative of the new generation of wide bandgap semiconductor materials. With a wide energy gap (~ 5 eV), a high theoretical breakdown field strength (~ 8 MV/cm), and a large BFOM (~ 3444), it indicates broad prospects in application fields such as high-voltage power electronics, radio frequency communication, and deep ultraviolet photoelectric detection. In the past two years, research on Gallium Oxide materials and their devices in China has made rapid progress. The growth methods and sizes of single crystal have been continuously broken through, the quality of epitaxial films and the performance of devices have been constantly improved, and P-type doping and thermal management technologies have also achieved leapfrog development, which has effectively promoted the industrialization process of Gallium Oxide power devices, solar-blind ultraviolet detection devices, etc.

      The Cross-Strait Conference on Gallium Oxide and Related Materials and Devices, as a benchmark academic conference in the field of Gallium Oxide materials research, has been successfully held for four sessions since its establishment in 2017, with the number of participants increasing year by year. The fifth conference of this session is hosted by the Shanghai Key Laboratory of Wide Band Gap and Ultra-Wide Band Gap Semiconductor Materials, and jointly organized by Southern University of Science and Technology, Songshan Lake Materials Laboratory, Journal of Synthetic Crystals, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, and the Asian Gallium Oxide Alliance. The conference aims to build a platform for mutual exchange and cooperation among scientific researchers and technicians in the field of Gallium Oxide materials and devices on both sides of the Cross-Strait, showcase the latest research achievements in related fields, discuss key scientific and technological issues, further promote scientific and technological cooperation and progress across the strait, and drive the continuous innovative development of basic research and applied technologies in related fields. The conference is scheduled to be held at the Songshan Lake Materials Laboratory in Dongguan, Guangdong Province from October 10th to 12th, 2025. We sincerely invite scholars and colleagues from universities, research institutions and related enterprises and public institutions on both sides of the Taiwan Strait to attend and exchange ideas for win-win cooperation.

      Before the conference officially opens, the Alliance will provide you with an advance overview of the agenda, keynote reports, and participating members, enabling you to gain early insight into industry hotspots and research frontiers, and offering authoritative guidance to help participants plan their schedules efficiently and engage in in-depth exchanges.

Conference Report Agenda

 

Keynote Speakers

      Daniela Gogova – Researcher, Semiconductor Laboratory, Department of Physics, Linköping University, Sweden. Former positions include Central Laboratory of Solar and New Energy, Bulgarian Academy of Sciences (CLSENES-BAS), Institute of Materials Science and Technology, TU Berlin, and Leibniz Institute for Crystal Growth, Germany. Her research focuses on wide-bandgap semiconductor materials, physics, and devices. She has participated in EU projects on solar materials and systems at CLSENES-BAS, the EU Sixth Framework Bulgarian “Excellence Center,” and the EU DENIS HVPE GaN project for optoelectronics. Supported by German BMBF, SAW, and DFG projects.
      Presentation: Ultra-Wide Bandgap Gallium Oxide for Next Generation High-Power Electronics: Growth, Doping and Radiation Stability

      Chen Xiufang – Professor and PhD supervisor, Institute of Next-Generation Semiconductor Materials. Changjiang Scholar Distinguished Professor. Specializes in wide-bandgap semiconductors such as SiC and related chips. Led 20+ national and provincial projects, facilitated 3 technology transfers totaling 45 million RMB. Current roles include Deputy Director of the National Key Laboratory of Crystal Materials and Executive Deputy Director of the Institute of Next-Generation Semiconductor Materials. Awards include “Double-Lead Teacher” studio and Shandong Youth Innovation Team.
      Presentation: Silicon Carbide Material Technology and Applications

      Feng Zhechuan – Professor, Chinese-American, internationally recognized expert in wide-bandgap semiconductors. Born December 1944, graduated from Peking University, PhD from University of Pittsburgh. Formerly at Emory University, National University of Singapore, Georgia Tech, and National Taiwan University. Joined Guangxi University in 2015 as Distinguished Professor. Research focuses on GaN, ZnO, SiC materials’ optical properties, growth, and device applications. Authored 11 English monographs, 700+ papers, cited nearly 5,000 times; SPIE Fellow.
      Presentation: Influence of Zn Flow and Temperature on MOCVD-Grown ZnGa₂O₄ Films and Optoelectronic Properties

      Huang Wenhai – Associate Professor, Department of Electronic and Computer Engineering, HKUST. Dual BSc in EE and Materials Science from Cornell University (2004), PhD in EE from UC Santa Barbara (2009). Early researcher on N-polar GaN RF devices. Experience includes SEMATECH, NICT, and University of Massachusetts Lowell. Research recognized with multiple awards including SEMATECH Excellence Award and NICT Individual Achievement Award. Editor for Journal of Materials Research and IEEE Transactions on Electron Devices.
      Presentation: Requirements for Gallium Oxide Power Devices

      Takashi Egawa– Professor, Director, Nano-Devices and Systems Research Center, Nagoya Institute of Technology, Japan. Research on compound semiconductor devices, MOCVD heteroepitaxy of GaN and GaAs, and optoelectronic applications. Published 220+ international papers, recipient of multiple awards including Kohei Award, MEXT Award, and Harunari Inoue Award. Editor for IEEE Electron Device Letters, active in Jpn. Appl. Phys. Soc. and IEEE EDS.
      Presentation: Heteroepitaxial Growth of GaN-on-Si and Power Device Applications

      Long Shibing – Professor, University of Science and Technology of China. Research in micro-nano fabrication, resistive memory, ultra-wide-bandgap semiconductor devices (power and detectors), and memory circuit design. National Distinguished Young Scholar, IEEE Senior Member. 100+ patents, over 100 publications with 5,500+ citations. Led 20+ funded projects. Recipient of National Technology Invention Second Prize, National Natural Science Second Prize, CAS Distinguished Achievement Award.
      Presentation: Novel Gallium Oxide-Based Deep-UV Optoelectronic Sensing Devices

      Ye Jiandong –From 2006 to 2015, he worked as a Senior Research Engineer at the Institute of Microelectronics, Singapore, and later as a QE II Fellow at the Australian National University. In 2010, he joined the School of Electronic Science and Engineering at Nanjing University as a Professor and Ph.D. supervisor. His research has long focused on gallium oxide ultra-wide bandgap semiconductor materials and devices. Over the past five years, he has published more than 80 high-impact papers as a corresponding author, co-/authored four books, and holds 14 granted invention patents. He has led a number of major projects, including the National Key R&D Program of China, NSFC Distinguished/Key/Excellent Young Scientist programs, Jiangsu Distinguished Young Scholar, Jiangsu Major Science and Technology Project, and Jiangsu Key R&D Program. As the first contributor, he has received the Second Prize of the Jiangsu Province Science and Technology Award and the Australian QE II Research Award.

      Presentation: Phase Control and Defect Engineering in Gallium Oxide Heterostructures

      Zhang Guanzhang –Tenured Associate Professor at the School of Information Engineering, Peking University Shenzhen Graduate School. His research focuses on bio-neuromorphic electronics, wide bandgap semiconductors, novel memory devices, and supercritical fluids. As principal investigator, he has undertaken multiple research projects funded by the National Natural Science Foundation of China, the Guangdong Natural Science Foundation, and the Shenzhen Science and Technology Innovation Commission. He has published over 180 SCI-indexed papers, which have been cited more than 5,000 times, including one ESI Highly Cited Paper, with an H-index of 40. He also holds 18 patents in mainland China, 23 patents in Taiwan, and 13 patents in the United States.

      Presentation: Application and Exploration of Supercritical Fluid Technology in Electronic Devices

      Zhou Hong – Leading professor at Xidian University and has been selected for multiple national high-level talent programs. His main research areas include wide-bandgap and ultra-wide-bandgap semiconductor RF power and high-voltage devices. He has received two First-Class National Defense and Shaanxi Province Technological Invention Awards, with his research applied in China’s major equipment. He is listed among the top 2% of global scientists and highly cited Chinese scholars. He has published over 150 papers in top journals, including Nature Nanotechnology, Nature Communications, Science Advances, and IEEE journals (TIE, TPE, EDL, TED), as well as in premier conferences like IEDM and VLSI. His work has been cited 8,000 times, including 10 ESI Highly Cited Papers, and he has developed semiconductor devices that hold multiple international performance records. His research has been featured in leading industry magazines such as Compound Semiconductor, Semiconductor Today, Electronic Component News, Physics Or, and Nano Werk.

      Presentation: Progress and Perspectives on Ga₂O₃ Power Devices with GHz, kV, and A-Level Performance

      Sasaki Kohei – Graduated from the master’s program at Nagaoka University of Technology in March 2006 and then joined Tamura Corporation, working in the Core Technology Division on Ga₂O₃ crystal growth and power device development. He has since developed MBE growth technology for Ga₂O₃, n-type ion implantation techniques, high-resistivity substrates, trench MOS-SBDs, and trench JBS diodes, with over 80 related patent applications. In 2018, he joined Novel Crystal Technology, Inc., and has served as a board member and Chief Technology Officer (CTO) since 2019. He received his Ph.D. from Kyoto University in 2016 via thesis submission.

        Presentation: Advances in Ga₂O₃ Crystal Growth and Device Applications

 

Roundtable Forum Speakers

      Wang Gang – Professor and PhD supervisor, Sun Yat-sen University; PI at the State Key Laboratory of Optoelectronic Materials and Technologies; graduated from Nagoya Institute of Technology, Japan. His research focuses on compound semiconductor materials and related device fabrication. Selected as a “New Century Excellent Talent” by China’s Ministry of Education in 2007. Served as expert in the National Key R&D Programs for Semiconductor Lighting (“11th Five-Year” and “12th Five-Year”). Awards include “Industry-Academia-Research Innovation Achievement” (2015, 2019) and Guangdong Provincial Science & Technology Progress Award (Second Class, 2021, 2023). Ga₂O₃ technology led by him featured in the “Leading Technology List” of Sci-Tech Innovation China (2021). He has applied for 240 patents, published 165 papers, and led 68 research projects.

      Tao Xutang – Chair Professor and PhD supervisor, Shandong University; Changjiang Scholar Distinguished Professor; recipient of the National Science Fund for Distinguished Young Scholars. Deputy Editor of Journal of Synthetic Crystals. Research focuses on crystal materials with a full-chain approach from bulk crystals to micro-nano crystals, integrating material, device, and industrial applications. Published 400+ SCI papers, with coverage in Chem & Eng News, Chemistry & Industry, ACS, and NatureAsia. Awards include Ministry of Education First-Class Science & Technology Progress Award and Shandong Provincial Science & Technology Progress Award.

      Cao Bingyang – Professor and Dean, School of Aerospace, Tsinghua University. Recipient of the National Science Fund for Distinguished Young Scholars and its continuation. Fellow of the International Association for Advanced Materials, Asian Thermal Science Union, and American Society of Engineering Science. Vice Chair of the Asian Thermal Science and Engineering Union, and holds multiple key positions in thermal management and composite material societies. Research in micro/nanoscale heat transfer, thermal functional materials, and electronic system thermal management. Leads 50+ projects funded by NSFC, National Key R&D Programs, and major national projects. Author of Non-Fourier Heat Transfer in Nanostructures, with 200+ SCI papers. Editor roles include ES Energy & Environment, International Journal of Thermal Sciences, and Carbon Neutrality.

      Feng Zhihong – Chief Scientist, China Electronics Technology Group Corporation (CETC); Researcher, 13th Research Institute, CETC; PhD supervisor at China Electronics Academy; PhD in Electrical and Electronic Engineering from HKUST. Executive Deputy Director, State Key Laboratory of Solid-State Microwave Devices and Circuits; Adjunct Professor, Shandong University. National-level leading talent, State Council special allowance recipient. Research in wide-bandgap semiconductors, carbon electronics, and terahertz electronics. Led the first international standard for GaN, published 200+ SCI papers, 100+ patents, authored 3 monographs. Awards include National Science & Technology Progress First Prize and multiple provincial awards. Listed among the global top 2% scientists.

      Liu Zhaohui – Chief Engineer, National New Energy Vehicle Technology Innovation Center; Head of Advanced E-Drive Business Unit; Executive Director, E-Drive Technology Research Center, University of Sheffield. Member of China Electrotechnical Society and EV Committee. Selected for national-level overseas high-level talent programs; recipient of Beijing Distinguished Young Scientist Award and titles including Beijing Outstanding Engineer and Model Worker. Research on power chip packaging and EV e-drive system integration. Led 12 EU, national, and municipal projects; 60+ high-level publications; 12 patents; 2 book chapters; lead author for 3 group standards; contributed to 1 international standard.

Forum Moderator

      Ye Jiandong – From 2006 to 2015, he worked as a Senior Research Engineer at the Institute of Microelectronics, Singapore, and later as a QE II Fellow at the Australian National University. In 2010, he joined the School of Electronic Science and Engineering at Nanjing University as a Professor and Ph.D. supervisor. His research has long focused on gallium oxide ultra-wide bandgap semiconductor materials and devices. Over the past five years, he has published more than 80 high-impact papers as a corresponding author, co-/authored four books, and holds 14 granted invention patents. He has led a number of major projects, including the National Key R&D Program of China, NSFC Distinguished/Key/Excellent Young Scientist programs, Jiangsu Distinguished Young Scholar, Jiangsu Major Science and Technology Project, and Jiangsu Key R&D Program. As the first contributor, he has received the Second Prize of the Jiangsu Province Science and Technology Award and the Australian QE II Research Award.

 

Member Overview

Booth number: 1

      Shandong Liguan Microelectronics Equipment Co., LTD. (abbreviation: Shandong Liguan), founded in 2013. After 12 years of development, Shandong Liguan has become a domestic and foreign advanced semiconductor equipment manufacturing and process technology service provider integrating R&D, production and sales.

      The company's products cover the first generation to the fourth generation of semiconductor material process equipment, all with independent intellectual property rights, completely independent and controllable, products are widely used in integrated circuits, power semiconductors, compound semiconductors, 5G chips, optical communication, MEMS and other new electronic device manufacturing fields.

      The company can provide customers with an integrated solution of "equipment manufacturing + process technical service". 

Main products

      I.Semiconductor process equipment:

      1, Oxidation/diffusion/annealing equipment

      Vertical furnace, horizontal furnace, SiC high temperature oxidation furnace, SiC high temperature annealing furnace

      2, CVD equipment

      LPCVD vertical furnace, LPCVD horizontal furnace

1. Compound crystal equipment:

      1, SiC single crystal growth equipment

      PVT furnace (induction furnace, resistance furnace), liquid phase crystal growth furnace, seed crystal bonding equipment (soft pressing equipment, hard pressing equipment)

      2, GaN single crystal growth equipment

      HVPE crystal growth furnace (horizontal, vertical)

      3, Ga₂O₃ single crystal growth and epitaxy equipment

      EFG crystal growth furnace, Vertical Bridgman method (VB) furnace (non-iridium technology), HVPE epitaxial furnace (horizontal, vertical)

      4, diamond single crystal growth equipment

      MPCVD crystal growth furnace

      5, GaAs/InP single crystal growth equipment

      Crucible lowering furnace

 

 

Booth number: 2

      Hangzhou Fujia Gallium Technology Co., LTD., founded on December 31, 2019, is the first "hard technology" enterprise registered by Hangzhou Institute of Optics and Fine Mechanics. With the vision of "Making the World Use Good Materials", the company focuses on the industrialization work of wide bandgap semiconductor Gallium Oxide materials. The core products include Gallium Oxide single crystal substrates, MOCVD epitaxial wafers, MBE epitaxial wafers, The VB method and EFG method crystal growth equipment, substrate grinding and polishing equipment, etc. provide systematic solutions for material development, accelerate the full chain connection of the ultra-wide bandgap Gallium Oxide industry, and promote the application of Gallium Oxide materials in power devices, microwave and radio frequency devices, and optoelectronic detection fields.The company's series of important achievements in the development of Gallium Oxide have been featured and reported by well-known media such as People's Daily, Xinhuanet, China Securities News, and The Paper.

Main products

 

 

Booth number: 3

      Suzhou GAO Semiconductor Co., Ltd is a high-tech enterprise focusing on the research and development of Gallium Oxide materials, and has always taken leading the technological innovation and application of Gallium Oxide as its mission. It is one of the few companies in China with comprehensive technology and capability of Gallium Oxide crystal growth, thin film epitaxy, related devices and special production equipment research and development.

      Professor Tang Weihua, the founder of the company, has been deeply engaged in the field of Gallium Oxide materials for more than ten years. He took the lead in establishing and realizing the industrialization of Gallium Oxide in China, and established Suzhou GAO Semiconductor Co., Ltd in 2021. Since its establishment, the company has made a series of innovative achievements in the growth of Gallium Oxide crystals, and successfully achieved breakthroughs in large crystal size, high quality and multiple crystal face types, which has injected strong impetus into the development of the industry.

      In the future, the company will take technological innovation as the core driving force, continue to explore the higher potential of Gallium Oxide materials, promote the deep integration of science and technology and industry, and strive to become a key force in building an efficient, green and intelligent future.

 

 

Booth number: 4

      Lanhe Technology is committed to innovation and localization of MOCVD and CVD equipment for compound semiconductors, and has a top-notch technical team and independent intellectual property rights in the field of compound semiconductors worldwide. The companies under the group have been awarded numerous honors, including "High-tech Enterprise", "Shanghai Specialized, Refined, Unique and Innovative Small and Medium Enterprises", "Jiangsu Specialized, Refined, Unique and Innovative Small and Medium Enterprises", "Xuzhou Technology Center", "Shanghai High-tech Achievement Transformation", "Research and Development Institution of Pudong New Area", "Zhejiang Province Innovation and Entrepreneurship Team", and "First Prize for Invention of Jilin Province". It has also been certified by SEMI-S2, SEMI-S6, Quality Management System, Intellectual Property Management System, etc.

Lanhe Technology has a top-notch technical team and independent intellectual property rights in the field of compound semiconductors worldwide. MOCVD and CVD series equipment products have been widely used in epitaxial growth of second-generation semiconductors InP and GaAs, third-generation semiconductors SiC and GaN, fourth-generation semiconductors Ga₂O₃ and low-dimensional MoS₂ and WSe₂, etc. Sales performance has consistently ranked among the top of domestic MOCVD equipment companies.

Main products

 

Booth number: 5

      Shandong Jingsheng Electronic Technology Co., Ltd. is a national-level high-tech enterprise focusing on the research and development and production of semiconductor equipment. The company's main products are the third and fourth generation semiconductor high-end equipment and a variety of crystal growth equipment, which are widely used in integrated circuit power devices, semiconductor materials, solar cells, LED chip manufacturing, new energy and other fields.

      Jingsheng Electronics pays attention to technological innovation, owns a number of independent intellectual property rights, and is committed to providing customers with high quality products and solutions. Adhering to the business philosophy of "integrity, innovation, cooperation and win-win", the company continues to improve its core competitiveness and promote the technological progress of the industry.

Main products

 

Booth number: 6

      Fujian Sunwise Semiconductor is a global leader in optoelectronic integrated chips (OEIC) and wide-bandgap compound semiconductor epitaxial thin-film materials. The company is internationally advanced in Ga₂O₃ ultra-wide bandgap material preparation technology and has independently developed a low-temperature MOCVD growth process for Ga₂O₃ films. It has successfully fabricated high-quality ε-phase Ga₂O₃ heteroepitaxial piezoelectric thin films on large-size silicon substrates, becoming the first company worldwide to achieve high-quality large-size silicon-substrate Ga₂O₃ heteroepitaxial piezoelectric films. By controlling wafer material from the source, Fujian Sunwise Semiconductor enables the localization of RF filter devices, mastering core third-generation communication RF technologies and products with independent intellectual property rights. Its products are widely applied in 5G/6G communications, intelligent IoT, aerospace, new energy vehicles, high-end equipment manufacturing, rail transit, radar systems, and other critical fields.

Main products

 

 

Booth number: 9

      Novel Crystal Technology, Inc. is the world’s first enterprise dedicated to the R&D and production of Ga₂O₃ substrates, epitaxial layers, and devices. From Ga₂O₃ crystal growth and substrate fabrication to epitaxial growth and device research, the company leads the global Ga₂O₃ industry, driving the path toward full industrialization.

      Wondersino Group serves as the exclusive agent of Novel Crystal Technology, Inc. in China, fully responsible for brand marketing, market promotion, and after-sales services in the region. Adhering to the philosophy of “leading cutting-edge technology and serving industry clients,” the group leverages globally advanced technology to deliver deeply customized “materials · equipment · process” integrated solutions, creating irreplaceable industrial value for customers.

Main products

 

 

Booth number: 10

      GAREN SEMI is a technology enterprise focusing on the research and development, production and sales of wide band gap semiconductor materials such as Gallium Oxide. Relying on the National Key Laboratory of Silicon and Advanced Semiconductor Materials of Hangzhou International Science and Technology Innovation Center of Zhejiang University, the company has built a research and development, production and operation team with academicians of Chinese Academy of Sciences as the chief consultant and rich industry experience. The company created a new technology for Gallium Oxide single crystal growth, and obtained 14 international and domestic invention patents, breaking the monopoly and blockade of Western countries on Gallium Oxide substrate materials. Based on solving the major national needs, GAREN SEMI will be deeply engaged in the continuous innovation of the Gallium Oxide upstream industry chain, and strive to provide product guarantee for the development of China's power electronics and other industries.

      GAREN SEMI leads the industry in innovation, achieving technological breakthroughs in the production of 6-inch Gallium Oxide single crystal substrates and wafer-grade (010) single crystal substrates using self-developed single crystal growth technologies such as the casting process, released the world's first 8-inch Gallium Oxide single crystal on March 5, 2025，and developing the first dedicated Gallium Oxide VB long-crystal equipment including process packages. The company has mastered the core technology of Gallium Oxide growth, processing, epitaxy and other whole chain, providing customers with large-scale high-quality Gallium Oxide products and equipment with complete independent intellectual property rights.

Main products

 

 

Booth number: 12

      Suzhou GAO Semiconductor Co., Ltd is a high-tech enterprise focusing on the research and development of Gallium Oxide materials, and has always taken leading the technological innovation and application of Gallium Oxide as its mission. It is one of the few companies in China with comprehensive technology and capability of Gallium Oxide crystal growth, thin film epitaxy, related devices and special production equipment research and development.

      Professor Tang Weihua, the founder of the company, has been deeply engaged in the field of Gallium Oxide materials for more than ten years. He took the lead in establishing and realizing the industrialization of Gallium Oxide in China, and established Suzhou GAO Semiconductor Co., Ltd in 2021. Since its establishment, the company has made a series of innovative achievements in the growth of Gallium Oxide crystals, and successfully achieved breakthroughs in large crystal size, high quality and multiple crystal face types, which has injected strong impetus into the development of the industry.

      In the future, the company will take technological innovation as the core driving force, continue to explore the higher potential of Gallium Oxide materials, promote the deep integration of science and technology and industry, and strive to become a key force in building an efficient, green and intelligent future.

Main products

 

Alliance Activities

      The Asia Gallium Oxide Alliance (AGOA), as the organizer of this conference, is committed to providing comprehensive and professional services and support to all attending guests and exhibiting members. Leveraging its position as a specialized platform in the Gallium Oxide field, AGOA aims to facilitate efficient and professional exchanges and collaborations at this dedicated Ga₂O₃ conference, promoting coordinated development across the industry ecosystem.

      During the conference, the Alliance has specially designed an interactive event: “Follow Us for Prizes”. Simply follow the official WeChat account and Video account，and share the designated article to your Moments to participate in the lucky draw. 100% winning rate, with prizes that are both fun and practical. We warmly invite you to visit the Alliance at Booth 11 and join the celebration of Gallium Oxide innovation!