【Device Papers】Degradation of 2.4-kV Ga₂O₃ Schottky Barrier Diode at High Temperatures Up to 500 ℃

      Researchers from the University of Utah have published a dissertation titled " Degradation of 2.4-kV Ga₂O₃ Schottky Barrier Diode at High Temperatures Up to 500 ℃" in IEEE Transactions on Electron Devices.

Abstract

      Ga₂O₃ Schottky barrier diodes (SBDs) featuring a field plate (FP) and a composite SiO₂/SiN_x dielectric layer beneath the FP were fabricated, achieving a breakdown voltage (BV) of 2.4 kV at room temperature (RT). Electrical performance and degradation were analyzed via I–V and C–V measurements from 25 ^∘C to 500 ^∘C, revealing temperature-dependent transport, interface stability, and device stability. Upon returning to RT, the diodes exhibited nearly unchanged forward characteristics, while the BV declined significantly from 2.4 kV to 700 V. This behavior indicates a temperature-induced reduction in the barrier height. The detailed analysis revealed that variable range hopping (VRH) dominated the leakage mechanism at moderate temperatures, while thermal emission (TE) became increasingly significant at temperatures exceeding 400 ^∘C.

DOI：

https://doi.org/10.1109/TED.2025.3601139