【Device Papers】High-sensitivity biosensing of breast cancer cells using a junction-less Ga₂O₃ FinFET with dual nanocavities

      Researchers from the Amrita Vishwa Vidyapeetham have published a dissertation titled "High-sensitivity biosensing of breast cancer cells using a junction-less Ga₂O₃ FinFET with dual nanocavities" in Microsystem Technologies.

Abstract

      The current research reports about the electrical detection of the breast cancer bit line cells by immobilizing them into our proposed device which is a Junction Less Ga₂O₃ FinFET based biosensor with 14 nm gate length. Our proposed device has two nanocavity regions within the oxide region underneath the gate metal for gaining the higher sensitivity value. We have even performed the analysis electrostatically for the extraction of Energy band diagram, Electric field, potential across the channel region horizontally including drain current terms. We can detect the variation in the sensitivity of the device by varying the dielectric constant value of cancer bit line cell respectively. We have even analyzed sensitivity in terms of Drain current (I_d), Switching ratio (I_on/I_off), threshold voltage (V_th) and g_m(transconductance). The drain current and switching ratio sensitivity has been extracted even in terms of fill factor and its impact on the device has been recorded by considering MCF7 whose dielectric constant is 27.5. Finally, it has been observed that all the electrical parameters and the sensitivity is recorded to be high for T47D which has the highest dielectric constant value among all the considered breast cancer bit cell lines.

DOI：

https://doi.org/10.1007/s00542-025-05948-4