【Member News】GAREN SEMI Wins Second Prize in the Enterprise Category at the 10th “Maker in China” Zhejiang Finals with the World’s Largest 8-inch Ga₂O₃ Single Crystal Product

      On September 17th, the final of the 10th "Maker China" Zhejiang Region and the "Zhejiang Good Project" SME Innovation and Entrepreneurship Competition were grandly held in Shaoxing City. Hangzhou GAREN SEMI Co., Ltd. represented the Hangzhou region in the top 30 finalists of Zhejiang Province. With its outstanding technological innovation and industrialization achievements, the company won the second prize in the enterprise category of the 10th “Maker China” Zhejiang Province Finals..

      This award not only recognizes the company's long-term achievements in the field of Gallium Oxide but also serves as a driving force for its future development. The company will continue to accelerate the industrialization of Gallium Oxide materials, promote ongoing breakthroughs in key technologies, and contribute to the independent and self-reliant development of China's fourth-generation semiconductor materials.

The awarding ceremony of the 10th "Maker China" Zhejiang Provincial Finals

Xia Ning, the technical director of GAREN SEMI, was present at the roadshow

Competition Trophy

Leapfrog Development Speeds Up the Industry

      From technological exploration to industrial application, GAREN SEMI is writing an industry legend at a speed of "upgrading one generation of size every year". In 2022, the company successfully grew 2-inch Gallium Oxide single crystal, taking the first step towards technological breakthroughs. In 2023, 4-inch single crystal was successfully launched, achieving a breakthrough in size doubling. In 2024, the 6-inch single crystal substrate was successfully developed and a mass production line was quickly established. Currently, all of them have been stably supplied to downstream customers.

      In March 2025, the official release of the world's first 8-inch Gallium Oxide single crystal further elevated the company's technological strength to a new height. GAREN SEMI completed a leapfrog upgrade from 2 inches to 8 inches in just three years, creating the "Chinese speed" in the field of Gallium Oxide.

Core Technology Breakthroughs Shatter International Monopolies

      In terms of technological innovation, Gallium oxide Semiconductor has pioneered a new self-developed casting method for Gallium Oxide single crystal growth technology. This new melt method technology, developed by the team led by Academician Yang Deren, has significant advantages such as low cost, high efficiency, and strong controllability, and it holds complete independent intellectual property rights.

      Relying on this technology, the company has not only achieved stable production of multi-sized Gallium Oxide substrates, but also successfully developed the first dedicated VB crystal growth equipment for Gallium Oxide. This equipment can obtain large-sized single crystal with various crystal orientations through process control, which can meet the fully automated crystal growth requirements in high-temperature and high-oxygen environments, significantly improving production efficiency and crystal quality. It also supports the upgrade to larger-sized single crystal, meeting the various research and production demands of universities, research institutes and enterprise customers for the growth of Gallium Oxide crystals. This type of Gallium Oxide VB crystal growth equipment and its process package are now fully available for sale.

      Up to now, the company has been granted more than ten patents, including two international patents, completely breaking the long-term monopoly and technological blockade of Western countries such as the United States, Germany and Japan in the field of Gallium Oxide substrate materials.

Global Debut of 8-Inch Substrate: Opening a New Era of Industrialization

      In March 2025, GAREN SEMI officially released the world’s first 8-inch Gallium Oxide single crystal and corresponding processed substrates, setting a new global record for the size of Gallium Oxide single crystals. In July, this product passed tests conducted by authoritative domestic and international institutions, including Shenzhen Pinghu Laboratory and the Malvern Panalytical Asia-Pacific Center of Excellence for Applications. The full width at half maximum (FWHM) of its XRD rocking curves was as low as 12.4 arcsec, with an overall width below 30 arcsec, reaching an internationally leading level.

      The results of this quality inspection fully demonstrate that GAREN SEMI’s 8-inch Gallium Oxide wafer substrates possess excellent quality and are capable of meeting the production requirements of 8-inch silicon-based production lines. This advancement will significantly reduce the R&D difficulty and costs at the downstream application end, thereby accelerating the industrial implementation of Gallium Oxide technologies.

      GAREN SEMI’s Gallium Oxide substrates have gradually reached industrial-scale production, providing downstream customers with large-sized, high-quality single-crystal substrates. Currently, the company’s 8-inch substrates have entered the market and are available for shipment.

For more information about GAREN SEMI and its products

Visit our official website: http://garen.cc/

Or contact us in the following ways:

Mr. Jiang :15918719807

Email :jiangjiwei@garen.cc

Mr. Xia :19011278792

Email :xianing@garen.cc