【Epitaxy Papers】Ultrawide bandgap semiconductors for photonic applications: recent advances in epitaxial Ga₂O₃, hBN, and ScAlN

      Researchers from the Rice University have published a dissertation titled "Ultrawide bandgap semiconductors for photonic applications: recent advances in epitaxial Ga₂O₃, hBN, and ScAlN" in Optical Materials Express.

Abstract

      This review has highlighted recent progress in the epitaxial growth, optical properties, and photonic applications of three representative ultrawide-bandgap (UWBG) materials: Ga₂O₃, hBN, and ScAlN. Ga₂O₃ shows great promise for solar-blind ultraviolet (UV) detection. However, its intrinsic bandgap of approximately 4.9 eV corresponds to a cut-off wavelength near 250 nm, which is shorter than the ideal 280 nm threshold for solar-blind operation, resulting in unnecessary energy loss. Advancements in bandgap engineering, such as through the development of InGaO alloys, will be critical to further enhance Ga₂O₃’s performance in solar-blind UV photodetectors.

DOI：

https://doi.org/10.1364/OME.569135