【Member News】Congratulations to Council Member - GAREN SEMI for Winning the Second Prize in the Enterprise Group of the "Maker China" Hangzhou Region!

      On August 6, 2025, the final of the 10th "Maker China" and "Zhejiang Good Project" small and medium enterprises Innovation and Entrepreneurship Competition in Hangzhou was grandly held in Xiaoshan District, Hangzhou City, Zhejiang Province. Hangzhou GAREN SEMI Co., LTD. (hereinafter referred to as "GAREN SEMI") has stood out among many outstanding enterprises with its outstanding technological innovation strength and industrialization achievements, and won the second prize in the enterprise group of the 10th "Maker China" Hangzhou Regional Finals.

      This award is another significant milestone in the development history of GAREN SEMI. It not only affirms the company's technological research and development capabilities but also recognizes its continuous dedication to the field of semiconductor materials. In the future, the company will continue to uphold the concept of "Innovation-Driven, Industry for the Nation", promote continuous breakthroughs in key technologies, and contribute to the high-quality development of China's semiconductor industry!

The winners of the final of "Maker China" Hangzhou region

The defense scene of Xia Ning, the technical director of GAREN SEMI

Competition award certificates

List of winners for the corporate group

 

01 GAREN SEMI Continues to Lead the Innovation of Gallium Oxide Technology

      GAREN SEMI has always focused on the technological research and development of Gallium Oxide materials, adhering to the principle of giving equal weight to independent innovation and open cooperation. It has gradually overcome a number of key technologies and achieved fruitful results.

      In March 2025, GAREN SEMI globally launched an 8-inch Gallium Oxide substrate, breaking the international record for the size of Gallium Oxide substrates and becoming the first company in the world to master the single crystal growth technology of this size. From the birth of the first 2-inch single crystal in 2022, to the launch of the 4-inch single crystal in 2023 and the successful preparation of the 6-inch substrate in 2024, and then to the breakthrough in 8-inch technology, GAREN SEMI has set an industry record of iterating one size each year from 2 inches to 8 inches—demonstrating the ‘China Speed’ in Gallium Oxide technology”

      In May 2025, GAREN SEMI achieved another breakthrough in large-size Gallium Oxide crystal growth and substrate processing. Leveraging its self-developed crystal growth equipment dedicated to Gallium Oxide, the company successfully fabricated a 100-millimeter (010) Gallium Oxide single-crystal substrate using the Vertical Bridgman (VB) method. This marks the first report of such a result worldwide.

      In addition, GAREN SEMI has extensively carried out international and domestic project cooperation, and actively promoted the standardization and industrialization of Gallium Oxide semiconductor materials.

      In May 2025, GAREN SEMI signed a global strategic cooperation agreement with NextGO Epi, an incubated enterprise of the Leibniz Institute for Crystal Growth in Germany. The two sides will leverage their technological advantages to collaborate on research and development, focusing on the R&D and industrialization of Gallium Oxide, an ultra-wide bandgap semiconductor material, and injecting new impetus into the global semiconductor industry.

      In June 2025, the company participated in the review meeting of the draft of two group standards, namely " Testing Method for Dislocation Density of Gallium Oxide Single Crystal" and "β-Phase Gallium Oxide Homoepitaxial Wafer", as the leading drafting unit, and also participated in the project initiation of the group standard  "Non-Destructive XRT Detection of Defects in Gallium Oxide Materials", both of which were successfully reviewed.

 

 

02 The final of the 10th Maker China Hangzhou Competition

      On August 6th, the 10th "Maker China" small and medium enterprises Innovation and Entrepreneurship Competition and the final and award ceremony of the "Zhejiang Good Project" Hangzhou region were grandly held at the Xiaoshan Conference Center. This year's competition, with the theme of "Focusing on the industrial chain, deploying the innovation chain, allocating the capital chain, and cultivating the talent chain", brought together outstanding entrepreneurial projects and entrepreneurs from all over Hangzhou. Focusing on the five industrial ecosystems of smart Internet of Things, biomedicine, high-end equipment, new materials and green energy, and for the first time setting up five future industrial tracks of general artificial intelligence, low-altitude economy, humanoid robots, brain-like intelligence and synthetic biology, highlighting innovative projects of key core technologies, key processes, key equipment and key products. After more than two months of intense competition, 25 hard-tech projects emerged from 323 competing teams, covering cutting-edge fields such as semiconductors, artificial intelligence, and high-end manufacturing, presenting three major characteristics: high technical barriers, deep industrial integration, and new application scenarios.

      Data shows that the competition has cumulatively cultivated 753 Innovative Small and Medium-Sized Enterprise, 431 provincial-level specialized, refined, distinctive and innovative small and medium enterprises, and 80 national-level specialized, refined, distinctive and innovative "little giant" enterprises, injecting powerful impetus into the high-quality development of Hangzhou.

 

 

03 GAREN SEMI: Winning Multiple Awards, Showcasing Cutting-Edge Innovation

      In 2025, GAREN SEMI attended various exhibitions and competitions and won multiple awards.

      In March 2025, at SEMICON CHINA, the world's largest semiconductor industry event, GAREN SEMI globally launched an 8-inch Gallium Oxide wafer substrate and was awarded the "SEMI Outstanding Contribution Award for Sustainable Development".

      In April 2025, at the 2025 JFSC&CSE, GAREN SEMI was awarded the "Solidarity Colleagues Award".

      In May 2025, at the fourth session of the Fourth member conference of the Zhejiang Semiconductor Industry Association, Hangzhou GAREN SEMI was awarded the "Innovation Vitality Award" of the Zhejiang Semiconductor Industry for its breakthrough achievements in Gallium Oxide technology.

SEMI Sustainability Award presentation ceremony

Solidarity Colleagues Award presentation ceremony

Innovation Vitality Award presentation ceremony

 

04 GAREN SEMI Opens Sales of Its Self-Developed VB Crystal Growth Equipment for Gallium Oxide

      GAREN SEMI not only provides Gallium Oxide single crystal substrate products, but has also fully opened sales of its proprietary Gallium Oxide VB crystal growth equipment and supporting process packages.

      In September 2024, GAREN SEMI launched its first self-developed crystal growth equipment dedicated to Gallium Oxide. The equipment is designed to meet the stringent requirements of high-temperature and high-oxygen environments during Gallium Oxide growth, while enabling fully automated operation to minimize manual intervention, thereby significantly improving production efficiency and crystal quality.

      Through precise process control, the equipment is capable of producing large-sized single crystals with various crystal orientations, and supports scalable upgrades to even larger crystals. It is well-suited to the research and production needs of universities, research institutes, and enterprises engaged in Gallium Oxide crystal growth. Today, this VB crystal growth equipment and its process package are fully available for sale worldwide.

 

For more information about GAREN SEMI and its products

Visit our official website: http://garen.cc/

Or contact us in the following ways:

Mr. Jiang :15918719807

Email :jiangjiwei@garen.cc

Mr. Xia :19011278792

Email :xianing@garen.cc