【International Papers】Growth and Characterization of Ga₂O₃ for Power Nanodevices Using Metal Nanoparticle Catalysts

      Researchers from the Kuwait Institute for Scientific Research have published a dissertation titled "Growth and Characterization of Ga₂O₃ for Power Nanodevices Using Metal Nanoparticle Catalysts" in Nanomaterial.

Background

      Gallium oxide (Ga₂O₃), a semiconductor with a broad bandgap of about 4.9 eV, has drawn a lot of interest because of its potential applications in ultraviolet, photodetection, high-power electronics and optoelectronics. Its exceptional properties, such as excellent electron mobility, high breakdown voltage and outstanding thermal stability, make it an ideal candidate for high-temperature and high-voltage applications. However, the performance of Ga₂O₃-based devices depends on the material’s crystal size, morphology and defect density. Therefore, understanding and controlling the growth mechanism of Ga₂O₃ is crucial for optimizing its properties and scaling up production for industrial purposes.

Abstract

      A simple and inexpensive thermal oxidation process is used to grow β-Ga₂O₃ oxide (β-Ga₂O₃) thin films/nanorods on a c-plane (0001) sapphire substrate using Ag/Au catalysts. The effect of these catalysts on the growth mechanism of Ga₂O₃ was studied by different characterization techniques, including X-ray diffraction analysis (XRD), Scanning Electron Microscopy (SEM), and Energy Dispersive X-ray analysis (EDX). The XRD results of the grown Ga₂O₃ on a sapphire substrate show three sharp diffraction peaks located at 19.31°, 38.70° and 59.38° corresponding to the (-201), (-402) and (-603) planes of β-Ga₂O₃. Field Emission Scanning Electron Microscope (FESEM) analysis showed the formation of longer and denser Ga₂O₃ nanowires at higher temperatures, especially in the presence of silver nanoparticles as catalysts.