【Member News】"Defect Breakthrough" of Gallium Oxide Epitaxial Materials! Professor He Yunlong from Xidian University Analyzed the Mechanism of Defect and the Surface Leveling Solution

Guest Profile

      He Yunlong, associate professor, who has long been engaged in the research and development of wide band gap semiconductor material epitaxy and power devices. He has led projects such as the National Natural Science Foundation of China's Youth Program and General Program, and has participated in several major national science and technology projects. He has published over 30 high-level academic papers as the first or corresponding author, applied for over 70 invention patents, and obtained over 20 authorized invention patents.

Speech Summary

      1. The reporter conducted a detailed investigation into the microstructure of process-induced defect at the interface of Gallium Oxide epitaxial films and effectively suppressed the formation of this defect by optimizing the growth conditions.

      2. The speaker enhanced the atomic migration rate on the surface of Gallium Oxide films through pulsed Al-assisted epitaxial growth technology, effectively reducing the surface roughness of the epitaxial films.