【Device Papers】2D bismuth/Ga₂O₃ van der Waals heterostructure for ultraviolet photodetectors with high responsivity and detectivity

      Researchers from the Beijing University of Posts and Telecommunications have published a dissertation titled "2D bismuth/Ga₂O₃ van der Waals heterostructure for ultraviolet photodetectors with high responsivity and detectivity " in Chinese Optics Letters.

Abstract

      Gallium oxide (Ga₂O₃), a promising candidate in ultraviolet photodetection, suffers significant limitations in its optoelectronic performance owing to the challenge of achieving p-type doping. To address this challenge, we designed a type-I heterostructure photodetector (PD) by depositing two-dimensional Bi films on Ga₂O₃ using the pulsed laser deposition technique. Under the illumination intensity of 0.1 µW/cm², this PD exhibits a remarkable responsivity of up to 200 mA/W and a detectivity of 8.58 × 10¹¹ Jones, demonstrating its excellent low-light detection ability. In addition, due to the built-in electric field of the heterojunction, the device can effectively suppress the dark current and has the performance of self-powered detection.

DOI：

https://opg.optica.org/col/abstract.cfm?URI=col-23-7-071601