【Device Papers】Research of Single-event Burnout in Enhanced β-Ga₂O₃ VDMOS Via Low Carrier Lifetime Control Technology

      Researchers from the The 58th Research Institute of China Electronics Technology Group have published a dissertation titled "Research of Single-event Burnout in Enhanced β-Ga₂O₃ VDMOS Via Low Carrier Lifetime Control Technology" in Research & Progress of SSE.

Abstract

      The single-event burnout (SEB) mechanism and radiation-hardening methods for enhancement-mode β-Ga₂O₃ VDMOS devices with current blocking layer (CBL) were investigated in this work.Through TCAD analysis,the key physical mechanism of SEB was revealed:hole accumulation is caused in the channel-source connection region by heavy ion strikes,which continuously generated additional holes through impact ionization processes,ultimately leading to localized thermal failure and device burnout.To address this mechanism,a low carrier lifetime control (LCLC) technique was proposed,which effectively optimizes hole concentration and peak electric field distribution by introducing deep-level defects to reduce carrier lifetime.Experimental results show that under bias conditions of V_ds=400 V and V_gs=0 V,with a heavy ion linear energy transfer value of 49 Me V·cm²/mg,the device peak temperature is reduced by the LCLC technique from 2556 K to 1066 K,significantly below the material melting point (2000 K).Impact ionization effects and thermal power concentration are effectively suppressed by this technique through optimization of hole distribution and electric field distribution,providing a new technological approach for SEB hardening design of enhancement-modeβ-Ga₂O₃  VDMOS devices.

LINK：

https://kns.cnki.net/kcms2/article/abstract?v=5ykJdPmCibJ6jwbhr7VgnrOSe3u5aW4Zyd7T25CO8ox04XAXDzhe56C5zX-toxy6WQMFpEcb0-a5aHACHvH8_xMYIfFkYpWo1-mb7zO_jRrynIO-mDGLV7xkffGP5EP_5uUsyG9U0GduoitWgg8ECVBHWcoRza69OiMBNDwI22g0AzXuxwnb4S0YSLCTUD02_PjM86yOaFg=&uniplatform=NZKPT