【Device Papers】Atmospheric neutron-induced single-event burnout in β-Ga₂O₃ Schottky barrier diode

      Researchers from the China Electronic Product Reliability and Environmental Testing Research Institute have published a dissertation titled "Atmospheric neutron-induced single-event burnout in β-Ga₂O₃ Schottky barrier diode" in Applied Physics Letters.

Abstract

      This paper investigates the single-event burnout (SEB) effect of β-Ga₂O₃ Schottky barrier diode (SBD) under atmospheric neutron irradiation, including the degradation modes and physical mechanisms. The experimental results indicate that the reverse bias voltage (U_R) is a critical factor influencing SEB failure of β-Ga₂O₃ SBD devices. When U_R reaches 600 V, SEB failure occurs, characterized as a sudden loss of voltage-blocking capability during atmospheric neutron irradiation. The Emission Microscope and Scanning Electron Microscopy analysis reveal that SEB events occur at the edge of the Schottky junction, with the damaged area forming an approximately elliptical molten “void.” Geant 4 and TCAD simulation results show that the incidence of secondary ions, such as Cr, causes a rise in the lattice temperature inside the device, with the maximum lattice temperature increasing as U_R increases. When U_R is sufficiently high, the local lattice temperature reaches the melting point of the Ga₂O₃ material, ultimately leading to SEB failure. This study provides valuable theoretical support for Ga₂O₃-based power devices in aerospace applications.

DOI：

https://doi.org/10.1063/5.0273065