【Member News】

      Qi Hongji, the founder of Fujia Gallium, has been honored with the "Innovative Figure Award for Industry, Education and Research Cooperation" of Zhejiang Province in 2024, highlighting his outstanding contributions to promoting the in-depth integration of industry, education and research.

      On June 22nd, the Fifth Qianjiangchao Science and Technology Innovation Forum, with the theme of "Technology Leading the Future · Innovation Driving Industries", was held at the ZJU-Hangzhou Global Scientific and Technological Innovation Center. The forum was jointly organized by the Zhejiang Province industry, education and research Cooperation Promotion Association, the ZJU-Hangzhou Global Scientific and Technological Innovation Center, and the Zhejiang Science Popularization Federation. It brought together many innovation leaders from universities, research institutes, enterprises and investment institutions to discuss the cutting-edge of science and technology and industry. During the forum, to recognize advanced models in industry, education and research cooperation and innovation, a series of important awards were presented, including the "Innovative Figure Award for Industry, Education and Research Cooperation" of Zhejiang Province in 2024.

      Since its establishment in 2019, Fujia Gallium has always taken the industrialization of scientific and technological achievements as its core orientation, closely followed market demands, and continuously broken through industrialization bottlenecks in the field of next-generation semiconductor new materials, creating many industry "firsts" : it launched the world's first Gallium Oxide crystal growth equipment with the "one-click crystal growth" function, laying the foundation for the batch production of Gallium Oxide single crystal substrates; Take the lead in building the first domestic production line with an annual output of 10,000 6-inch Gallium Oxide substrates; A more mass-producible Gallium Oxide homogeneous epitaxial technology has been developed, and the performance of the epitaxial film is at the international leading level. It will effectively promote the high-quality and rapid development of the new ultra-wide band gap semiconductor Gallium Oxide industry chain.

      In the process of technological innovation and industrialization practice, Fujia Gallium actively leverages the collaborative role of industry, education and research collaboration. By hosting large-scale events such as the "Gallium Oxide Materials and Devices" special conference of the Journal of Synthetic Crystals and the Shangguang Materials Forum, it builds a platform for industry, education and research exchanges. Deepen joint research with universities such as Xiamen University, Fuzhou University and Sun Yat-sen University to explore frontier scientific issues in the field; At the same time, as one of the first initiating units, it actively promoted the construction of the "Ultra-Wide Band Gap Semiconductor Innovation and Development Alliance" platform, effectively facilitating the in-depth integration of industry, education and research.

      Winning the " Innovative Figure Award for Industry, Education and Research Cooperation" this time is not only a high recognition of the individual's work in the transformation and industrialization of scientific and technological achievements, but also an affirmation of Fujia Gallium, as a leading enterprise in the industry, for its outstanding contributions to the development of the industry in promoting the technological innovation of Gallium Oxide single crystal substrates and epitaxial layers, industrial chain collaboration, and the cooperation of industry, education and research parties. Taking this as a new starting point, Fujia Gallium will continue to deepen the depth and expand the breadth of cooperation, and join hands with partners from all sectors of industry, education and research to contribute to enhancing China's global competitiveness in the field of next-generation semiconductor new materials.

About Hangzhou Fujia Gallium

      Hangzhou Fujia Gallium Technology Co., LTD., founded on December 31, 2019, is the first "hard technology" enterprise registered by Hangzhou Institute of Optics and Fine Mechanics. With the vision of "Making the World Use Good Materials", the company focuses on the industrialization work of wide bandgap semiconductor Gallium Oxide materials. The core products include Gallium Oxide single crystal substrates, MOCVD epitaxial wafers, MBE epitaxial wafers, Gallium Oxide crystal growth and processing equipment. The products mainly serve the fields of power devices, microwave and radio frequency, and optoelectronic detection.

      At present, the company has won a number of honors: In 2022, it won the Zhejiang Province Science and Technology Small and Medium-Sized Enterprise; National High-Tech Enterprise in 2023; In 2024, it will be awarded as Hangzhou Enterprise High-Tech Research and Development Center and Zhejiang Special Small and Medium-Sized Enterprise. Obtain ISO9001 quality system certification in 2025 (No. 20225Q20294R0M); It undertook one Gallium Oxide project for the National Development and Reform Commission and participated in three national and provincial projects from the Ministry of Science and Technology, Zhejiang Province, and Shanghai. In addition, it has obtained 12 international patents authorized (6 in the United States and 6 in Japan), 40 domestic patents authorized, 3 trademark certification and registration of "Fujia Gallium", and 4 software copyrights (crystal growth control software of "one-click crystal growth").