【Epitaxy Papers】Effect of Post-Annealing and Oxygen on the Properties of Sn-Doped β-Ga₂O₃ Thin Film

      Researchers from the Gachon University have published a dissertation titled "Effect of Post-Annealing and Oxygen on the Properties of Sn-Doped β-Ga₂O₃ Thin Film" in Transactions on Electrical and Electronic Materials.

Abstract

      β-Ga₂O₃ is a remarkable material for next-generation power semiconductors and optoelectronics owing to its suitable properties, including excellent thermal and chemical stability, wide band gap, and large breakdown voltage. In this study, Sn-doped β-Ga₂O₃ thin films with the thickness of 200 nm were deposited on Si substrates at different O₂ flow rates using reactive sputtering. After sputtering, the samples were post-annealed at various temperatures and time, and the structural and electrical properties of the Sn-doped β-Ga₂O₃ thin films were investigated. X-ray diffraction analysis confirmed the appearance of the beta phase of Ga₂O₃ at 600 ℃, and the crystallization trend of each condition was investigated. The surface morphology of the films was investigated using scanning electron microscopy, whereby cracks were observed above 600 ℃, which is likely ascribed to the film stress owing to the lattice and thermal expansion coefficient mismatch between Si substrate and Ga₂O₃ film. Finally, the electrical properties of the Ga₂O₃ thin films were examined by Hall-effect measurement. Therefore, the effects of the post-annealing and O₂ flow rate conditions on Sn-doped β-Ga₂O₃ thin films were successfully investigated.

DOI：

https://doi.org/10.1007/s42341-025-00623-x