【Device Papers】Breakdown voltage enhancement in p-GaAs/n-Ga₂O₃ heterojunction diodes with advanced termination designs

      Researchers from the Duy Tan University (DTU) have published a dissertation titled "Breakdown voltage enhancement in p-GaAs/n-Ga₂O₃ heterojunction diodes with advanced termination designs" in Physica Scripta.

Abstract

      A vertical p-GaAs/n-Ga₂O₃ heterojunction diode (HJD) is proposed, achieving a high breakdown voltage (V_br) of 1210 V, a Baliga's figure of merit (BFOM) of 15.1 MW/cm², and a specific on-resistance (R_on,sp) of 96.9 mΩ·cm². To further enhance breakdown voltage and mitigate electric field crowding, a three-step junction termination extension (JTE) and a beveled edge termination are introduced. The three-step JTE effectively disperses the peak electric field, alleviates field concentration at the anode edge, and improves overall field distribution, leading to an increase in V_br to 1408 V. Meanwhile, the beveled edge termination efficiently reduces localized field stress and suppresses crowding effects at the anode edge and structural weak points. Among the proposed termination techniques, the beveled edge design offers the most effective field control, significantly lowering the electric field gradient at the device periphery and enabling the highest breakdown voltage of 1475 V. These findings pave the way for advanced Ga₂O₃ device structures and reaffirm the critical role of edge termination in Ga₂O₃ power devices.

DOI：https://doi.org/10.1088/1402-4896/addf8f