【Epitaxy Papers】Epitaxial lateral overgrowth of c-plane α-Ga₂O₃ using a stripe mask with ultra-narrow windows

      Researchers from the National Institute for Materials Science have published a dissertation titled "Epitaxial lateral overgrowth of c-plane α-Ga₂O₃ using a stripe mask with ultra-narrow windows" in Applied Physics Letters.

Abstract

      We demonstrated the epitaxial lateral overgrowth of α-Ga₂O₃ by halide vapor phase epitaxy using a stripe mask with an ultra-narrow window width of 50 − 750 nm. α-Ga₂O₃ stripes were formed only on the windows without unintentional nucleation on the mask, even on the mask with the narrowest window. Etch pit observations and cross-sectional transmission electron microscopy revealed that the propagation of dislocations into the regrown α-Ga₂O₃ was dramatically reduced by narrowing the window. The overall dislocation density in the coalesced film, including the window region and coalesced boundaries, was as low as 4 × 10⁷ cm⁻² in the case of the 50-nm window mask. We believe these results strongly contribute to the realization of α-Ga₂O₃-based high-performance future power devices.

DOI：

https://doi.org/10.1063/5.0269810