【Device Papers】Perspective on vertical Ga₂O₃ power MOSFETs utilizing current blocking layer technology

      Researchers from the  University of North Carolina at Charlotte have published a dissertation titled "Perspective on vertical Ga₂O₃ power MOSFETs utilizing current blocking layer technology" in JPhys Materials.

Abstract

      Beta-gallium oxide (β-Ga₂O₃) power device research activity in the past decade has seen a significant surge due to its remarkable material properties. With an ultra-wide bandgap of 4.8 eV, leading to a high breakdown field of 8 MV cm⁻¹, combined with well-established melt-grown substrate technology, β-Ga₂O₃ presents an exceptional opportunity to significantly advance power device technology. However, the highly localized holes and large acceptor activation energies render effective p-type doping in Ga₂O₃ extremely challenging. This has severely hindered the realization of conventional n–p–n type vertical power transistors in β-Ga₂O₃. Different strategies have been proposed and demonstrated to address this issue. In this perspective, we focus on one of the emerging solutions: using a current-blocking-layer (CBL) to mimic the functionality of the absent p-type layer to realize a vertical transistor with comparable performance. The progress made so far on different CBL designs in vertical β-Ga₂O₃ MOSFETs will be examined. The future outlook for Mg diffused CBL-enabled Ga₂O₃ vertical diffused barrier field-effect-transistor (VDBFET) is presented.

DOI：

https://doi.org/10.1088/2515-7639/add774