【Substrate Papers】Experimental Study of a Process Based on Photoelectrically Assisted Chemical-Mechanical Polishing of Gallium Oxide Wafers

      Researchers from the Xi'an University of Technology have published a dissertation titled "Experimental Study of a Process Based on Photoelectrically Assisted Chemical-Mechanical Polishing of Gallium Oxide Wafers" in ECS Journal of Solid State Science and Technology.

Abstract

      Addressing the issues of cleavage and low processing efficiency of the fourth-generation semiconductor material β-Ga₂O₃ substrate during the polishing, this study proposes an innovative global flattening processing approach based on the semiconductor properties of β-Ga₂O₃ and the principle of photoelectrochemical oxidation reaction. The approach integrates multi-energy fields encompassing optical, electrical, chemical, and mechanical aspects. A photoelectrochemical mechanical polishing device was constructed, and the factors influencing the polishing outcome, such as polishing pressure, rotational speed of the polishing disc, and voltage variation, were investigated via an orthogonal test. The results indicate that a material removal efficiency of 28.67 nm min⁻¹ can be achieved during the rough polishing stage, and a non-damaging surface with a surface roughness of 0.175 nm can be obtained during the fine polishing stage.

DOI：

https://doi.org/10.1149/2162-8777/add0e4